Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…
Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…
The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure,…
The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure, boosting token generation and…
Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can…
Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can deliver a compact,…
Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article,…
Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article, EPC9186HC2/HC3 and EPC91202,…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground…
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.
Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche…
Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling…
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…
Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power…
Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller,…
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller, lighter motor drive inverters.
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in…
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a…
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the…
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the controller in motor drive…
Facebook
Google
GitHub
Linkedin