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Solution-based Manufacturing Platform for Advanced WBG Technologies

Solution-based Manufacturing Platform for Advanced WBG Technologies

Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…


Sensor Placement Errors in High-Voltage Systems That Distort Measurements

Sensor Placement Errors in High-Voltage Systems That Distort Measurements

Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…


Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…


Why Oscilloscope Bandwidth Specs Are Often Misleading for HV Measurement

Why Oscilloscope Bandwidth Specs Are Often Misleading for HV Measurement

Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.


Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…


Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…


Thermal Management for SiC Semis—Top Side Cooling as an Innovative Solution

Thermal Management for SiC Semis—Top Side Cooling as an Innovative Solution

The growing demand for powerful and compact power electronics places high demands on the thermal management of modern semiconductor technologies.…


Predicting and Controlling Thermal Runaway in High-Voltage Power Modules

Predicting and Controlling Thermal Runaway in High-Voltage Power Modules

In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…


An Exploration of Surface Mount Power Packaging Technologies for SiC MOSFETs

An Exploration of Surface Mount Power Packaging Technologies for SiC MOSFETs

Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…


Selecting the Right SiC MOSFET for Efficient Zero-Voltage Switching

Selecting the Right SiC MOSFET for Efficient Zero-Voltage Switching

Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.


SiC-MPS Diodes Under Stress: Robust Performance Under Extreme Conditions

SiC-MPS Diodes Under Stress: Robust Performance Under Extreme Conditions

What is the reverse recovery behavior of SiC-MPS diodes in scenarios that challenge their thermal and dynamic robustness? This article provides a…


The Future of Power Conversion in Home Appliances with SiC SLIMDIPs

The Future of Power Conversion in Home Appliances with SiC SLIMDIPs

Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.


Advancing Industrial Power Conversion With Silicon Carbide

Advancing Industrial Power Conversion With Silicon Carbide

This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…


Next-Gen SiC MOSFET and Si RC-IGBT Tech Meets E-Mobility Needs

Next-Gen SiC MOSFET and Si RC-IGBT Tech Meets E-Mobility Needs

Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and compact…


HV-IGBT Module for High-Performance Inverter Design

HV-IGBT Module for High-Performance Inverter Design

Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through 7th-gen Si IGBT and RFC…


Silicon Carbide Inverter Solutions Enable Functionally Safe Drivetrain Design

Silicon Carbide Inverter Solutions Enable Functionally Safe Drivetrain Design

Learn how SiC inverter solutions offer a modular, functionally safe platform with certified components, accelerating development and compliance…


PCB Embedding of Semiconductor Dies: Enabling Next-Gen Power Electronics

PCB Embedding of Semiconductor Dies: Enabling Next-Gen Power Electronics

The embedding of semiconductor dies, particularly GaN and SiC MOSFETs, into PCB structures provides multiple system-level benefits. Learn how this…


Advanced SiC Trench Gate MOSFET Technology for Automotive Applications

Advanced SiC Trench Gate MOSFET Technology for Automotive Applications

SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…


SiC MOSFET Employs Optimized Structure for 1.5 Vdc Renewable Applications

SiC MOSFET Employs Optimized Structure for 1.5 Vdc Renewable Applications

The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.


Powering the SiC Revolution with Vertical Integration

Powering the SiC Revolution with Vertical Integration

Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.