Latest Silicon Technical Articles

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…

The growing demand for powerful and compact power electronics places high demands on the thermal management of modern…

The growing demand for powerful and compact power electronics places high demands on the thermal management of modern semiconductor technologies.…

Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in…

Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.

Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.

Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.

Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and…

Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and compact…

Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through…

Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through 7th-gen Si IGBT and RFC…

Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV…

Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.

This article examines an evaluation kit to shorten time-to-market for SiC inverters.

This article examines an evaluation kit to shorten time-to-market for SiC inverters.

When troubleshooting AC outputs driven by TRIACs, some confusing meter readings can result from the solid state…

When troubleshooting AC outputs driven by TRIACs, some confusing meter readings can result from the solid state properties of a series circuit. In…

This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic…

This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic gate drivers with GaN FETs,…

Harnessing the unique electrical advantages of wide-bandgap silicon carbide (SiC) in commercial applications requires…

Harnessing the unique electrical advantages of wide-bandgap silicon carbide (SiC) in commercial applications requires addressing reliability…

Each day that we wake up and turn on a light, the coffee machine, or electric stove to prepare breakfast, we expect all…

Each day that we wake up and turn on a light, the coffee machine, or electric stove to prepare breakfast, we expect all the electric motors,…

Wolfspeed has opened its Mohawk Valley Silicon Carbide fabrication facility in Marcy, N.Y. The 200 mm wafer fab aims to…

Wolfspeed has opened its Mohawk Valley Silicon Carbide fabrication facility in Marcy, N.Y. The 200 mm wafer fab aims to lead the transition from…

For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting…

For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…

The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background,…

The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background, starting with the components…

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using…

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status…

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices.…

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the…

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…