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Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…


More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure, boosting token generation and…


Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Learn how 150 V SuperQ MOSFETs boost 204 W converter efficiency greater than 0.8%, cut heat by 2 W, and lower peak temps by 31°C. They improve…


Ruggedness Matters: MOSFETs Built on Mature Planar Technology

Ruggedness Matters: MOSFETs Built on Mature Planar Technology

Many industrial and mission-critical systems continue to depend on MOSFETs with proven robustness and predictable behavior under stress. Learn how…


Isolated DC-DC Power Supplies: Module or Discrete Design?

Isolated DC-DC Power Supplies: Module or Discrete Design?

When is a fully integrated module the better option, and when does a discrete design offer the greater advantage? This story discusses the major…


Technical Articles May 27, 2026 by RECOM
Reverse Recovery Charge Is Not a Constant

Reverse Recovery Charge Is Not a Constant

Reverse recovery charge, QRR, is one of those parameters most power engineers know well. It appears prominently in MOSFET datasheets, it finds its…


800 V SiC Power Module With Integrated Current Measurement

800 V SiC Power Module With Integrated Current Measurement

Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can deliver a compact,…


An Enhanced TO-247 Package Significantly Lowers SiC MOSFET Temperature

An Enhanced TO-247 Package Significantly Lowers SiC MOSFET Temperature

ISOMOS from Analog Power Conversion, LLC, (APC-E)/Luminus [1] improves on the thermal performance of the popular TO-247 package used in many…


Advanced Partial Discharge Testing for Modern Power Modules

Advanced Partial Discharge Testing for Modern Power Modules

Modern power modules need PD testing that goes beyond traditional standards. This article looks at advanced diagnostic methods that help improve…


Solution-based Manufacturing Platform for Advanced WBG Technologies

Solution-based Manufacturing Platform for Advanced WBG Technologies

Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…


Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…


Formic Acid Soldering: Enabling the Next Generation of Power Devices—Part 2

Formic Acid Soldering: Enabling the Next Generation of Power Devices—Part 2

In part 2, we focus on application considerations and take a deeper look at case studies for prevailing solder material alternatives, including…


Sustainability and Energy Efficiency Benefits of Lead-Free Soldering

Sustainability and Energy Efficiency Benefits of Lead-Free Soldering

Learn how lead-free soldering offers a sustainable, energy-efficient solution for power module assembly. It achieves up to 55% energy savings and…


Meeting Compact Inverter Design Demand With Small Size While Maintaining Insulation Distance

Meeting Compact Inverter Design Demand With Small Size While Maintaining Insulation Distance

In recent years, power density of a power inverter stages are increasing by providing low power losses as well as compact size so that the demand…


Inside the Silicon Carbide JFET: Specs, Stability, and the New Performance Frontier

Inside the Silicon Carbide JFET: Specs, Stability, and the New Performance Frontier

Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…


Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…


Practical Limitations of IEC Partial Discharge Standards in Power Modules

Practical Limitations of IEC Partial Discharge Standards in Power Modules

IEC partial standards miss dv/dt, thermal, and micro-PD effects in power modules, limiting their value for inverter-driven reliability prediction.


Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…


Solving Military-Avionics DC-DC Power Challenges with Modularity—Part 4

Solving Military-Avionics DC-DC Power Challenges with Modularity—Part 4

While the first three parts in this article series detailed military and avionic standards and front-end solutions, this last Part 4 delves into…


Enabling High Efficiency: Gate Driver ICs for Automotive Traction Inverters

Enabling High Efficiency: Gate Driver ICs for Automotive Traction Inverters

E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules help ensure efficient designs.