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Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Learn how IceMOS Technology’s MEMS-based superjunction platform pushes power transistor limits, aiming to break the silicon barrier and surpass…


Switching Analysis: Testing for Reliability in Power Converter Designs

Switching Analysis: Testing for Reliability in Power Converter Designs

Build more reliable power converters with practical guidance on probe selection, test setup,…


Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Learn why high-frequency SiC switching can distort EV inverter efficiency results and how a…


Industry White Papers In partnership with Hioki
High Reliability Preforms for Module-To-Heatsink Attach

High Reliability Preforms for Module-To-Heatsink Attach

Learn how Innolot 2.0 offers a cost-optimized, highly reliable solder alloy for EV power module heatsink attachment, delivering superior creep…


What Current-Mode Gate Drivers Mean for Wide Bandgap Devices in Data Center Power

What Current-Mode Gate Drivers Mean for Wide Bandgap Devices in Data Center Power

AI's demand for power density drives the need for smaller, integrated gate drivers. High-voltage designs using wide bandgap transistors often…


Distribution Transformers and Voltage Regulation—Part 4: On- and Off-Load Tap Changers

Distribution Transformers and Voltage Regulation—Part 4: On- and Off-Load Tap Changers

In this article, we detail distribution transformer tap changers: fixed off-load (DETC) vs. dynamic on-load (OLTC) types, their operational roles,…


Analytical Relationship Between Feedback Loop Properties and Load Transient Response in Voltage Converters

Analytical Relationship Between Feedback Loop Properties and Load Transient Response in Voltage Converters

Here we present a generic, topology-independent loop model for voltage converters, linking frequency-domain design to time-domain performance using…


Low Voltage GaN Surpasses MOSFETs in AI Power Density

Low Voltage GaN Surpasses MOSFETs in AI Power Density

AI workloads are reshaping computing server power delivery requirements. Low-voltage GaN is emerging as a key enabler of higher efficiency and…


Transforming Energy Storage: The Role of Bidirectional Charging in BESS

Transforming Energy Storage: The Role of Bidirectional Charging in BESS

This article explores the role of Bidirectional functionality in enhancing Battery Energy Storage Systems' performance, reducing energy…


Distribution Transformers and Voltage Regulation—Part 3: Mounting

Distribution Transformers and Voltage Regulation—Part 3: Mounting

This article contrasts pole-mounted and pad-mounted transformers and their respective design, safety, and operational features in their different…


A Novel Current Sensing Technology Utilizing III-V Compound Hall Elements

A Novel Current Sensing Technology Utilizing III-V Compound Hall Elements

This article discusses a novel current-sensing technology to address the challenges of shunt resistors and isolated modulators used in applications…


7th Gen Fast Recovery Diode Enabling Full Performance of Modern IGBTs

7th Gen Fast Recovery Diode Enabling Full Performance of Modern IGBTs

With 7th gen IGBTs, switching speed limits shift from the transistor to the fast recovery diode. As IGBTs improve, this diode becomes the key…


Isolation Barrier Stress and Partial Discharge in Gate Drivers

Isolation Barrier Stress and Partial Discharge in Gate Drivers

Fast transients can push the gate driver isolation past its normal limits. This can cause partial discharge and, over time, lead to insulation…


A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…


Gate Driver Failure in High dv/dt Converters

Gate Driver Failure in High dv/dt Converters

High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra…


Test Equipment for the Next Generation of Power Semiconductors

Test Equipment for the Next Generation of Power Semiconductors

Modern power semiconductors demand advanced test equipment. As devices optimize for higher voltages and lower losses, precise, robust testing is…


Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…


Distribution Transformers and Voltage Regulation—Part 2: Step-Down Transformers

Distribution Transformers and Voltage Regulation—Part 2: Step-Down Transformers

Distribution transformers shape network voltage and fault behavior. Learn how winding configurations, vector groups, and grounding methods impact…


More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure, boosting token generation and…


Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Learn how 150 V SuperQ MOSFETs boost 204 W converter efficiency greater than 0.8%, cut heat by 2 W, and lower peak temps by 31°C. They improve…