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DC Anti-Backflow: Comparing Active ORing and Diode ORing for Reverse Current Protection

DC Anti-Backflow: Comparing Active ORing and Diode ORing for Reverse Current Protection

Reverse-current protection has become an integral part of overall power-system architecture. Selecting the appropriate ORing strategy requires…


Technical Articles Sep 23, 2026 by RECOM
Rethinking Inductor Sizing: The High-Gain Magnetic Illusion

Rethinking Inductor Sizing: The High-Gain Magnetic Illusion

By defining a Utilization Factor, this article debunks inductor sizing myths and presents a strategic framework for magnetic volume optimization in…


GaN Technology: Now With 2200 V Rating

GaN Technology: Now With 2200 V Rating

The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply engineers grappling with the…


From Grid to GPU: Enabling Multi-Megawatt SST Architectures With High-Current SiC Power Modules

From Grid to GPU: Enabling Multi-Megawatt SST Architectures With High-Current SiC Power Modules

AI-driven data centers require power supplies with high efficiency, power density, and reliability. Solid-State Transformer (SST) architectures…


Design and Sustainability Strategies for Advanced High Power IGBT Modules

Design and Sustainability Strategies for Advanced High Power IGBT Modules

IGBT modules must optimize losses and reliability to meet green energy demands, using sustainable, lead-free manufacturing and high-density…


Modeling of Powder Core Inductors for Assessing the Accuracy of Finite Element Simulation

Modeling of Powder Core Inductors for Assessing the Accuracy of Finite Element Simulation

This article models the inductance of various powder core shapes using experimental data. It also compares inductance values obtained through…


Buffer Technology Improves Fast Recovery Diodes for High-Speed IGBTs

Buffer Technology Improves Fast Recovery Diodes for High-Speed IGBTs

This article deals with fast recovery diodes (FRDs), which are tailored for high-speed IGBT applications, aiming to reduce oscillations, voltage…


IGBT Modules With SLC+ Technology: A Strong Fit for Wind Converter Designs

IGBT Modules With SLC+ Technology: A Strong Fit for Wind Converter Designs

Engineered for modern wind converter applications, LV100 IGBT modules with SLC+ technology support high efficiency, improved power-cycling…


GaN Continues To Expand Its Role in AI Power Architectures

GaN Continues To Expand Its Role in AI Power Architectures

Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for multi-kilowatt GPUs and emerging 800 V…


AI-Driven Battery Intelligence for UAVs

AI-Driven Battery Intelligence for UAVs

This article outlines the V.nod digital twin for UAVs: a battery-centric workflow using hardware-coupled emulation and AI. It validates batteries…


Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Learn how IceMOS Technology’s MEMS-based superjunction platform pushes power transistor limits, aiming to break the silicon barrier and surpass…


Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Learn why high-frequency SiC switching can distort EV inverter efficiency results and how a…


Industry White Papers In partnership with Hioki
High Reliability Preforms for Module-To-Heatsink Attach

High Reliability Preforms for Module-To-Heatsink Attach

Learn how Innolot 2.0 offers a cost-optimized, highly reliable solder alloy for EV power module heatsink attachment, delivering superior creep…


What Current-Mode Gate Drivers Mean for Wide Bandgap Devices in Data Center Power

What Current-Mode Gate Drivers Mean for Wide Bandgap Devices in Data Center Power

AI's demand for power density drives the need for smaller, integrated gate drivers. High-voltage designs using wide bandgap transistors often…


Analytical Relationship Between Feedback Loop Properties and Load Transient Response in Voltage Converters

Analytical Relationship Between Feedback Loop Properties and Load Transient Response in Voltage Converters

Here we present a generic, topology-independent loop model for voltage converters, linking frequency-domain design to time-domain performance using…


Low Voltage GaN Surpasses MOSFETs in AI Power Density

Low Voltage GaN Surpasses MOSFETs in AI Power Density

AI workloads are reshaping computing server power delivery requirements. Low-voltage GaN is emerging as a key enabler of higher efficiency and…


7th Gen Fast Recovery Diode Enabling Full Performance of Modern IGBTs

7th Gen Fast Recovery Diode Enabling Full Performance of Modern IGBTs

With 7th gen IGBTs, switching speed limits shift from the transistor to the fast recovery diode. As IGBTs improve, this diode becomes the key…


A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…


Gate Driver Failure in High dv/dt Converters

Gate Driver Failure in High dv/dt Converters

High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra…


Test Equipment for the Next Generation of Power Semiconductors

Test Equipment for the Next Generation of Power Semiconductors

Modern power semiconductors demand advanced test equipment. As devices optimize for higher voltages and lower losses, precise, robust testing is…