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Scalable SiC Traction Inverter Architecture for Next-Gen xEV Platforms

Scalable SiC Traction Inverter Architecture for Next-Gen xEV Platforms

Combining Mitsubishi Electric J3-Series 1300V SiC power modules with Mersen low-inductance laminated busbars to achieve high power density,…


Embedded Power Modules: Digital-Twin-Based Development for the Next Generation of SiC Inverters

Embedded Power Modules: Digital-Twin-Based Development for the Next Generation of SiC Inverters

Higher switching speed and increasing power density create new requirements for power semiconductor integration, parasitic behavior, thermal…


100 V GaN Transistor for AI, Industrial, and Motor-Drive Applications

100 V GaN Transistor for AI, Industrial, and Motor-Drive Applications

Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes efficiency, driving higher…


Building a Traction Inverter Around a Low-Inductance SiC Card

Building a Traction Inverter Around a Low-Inductance SiC Card

Fuji Electric’s new 3D-wired SiC module uses copper pins and a resin IMS to cut inductance by 76% and switching losses by 56%, boosting…


Preventing Under and Overdamping With Optimized GaN Gate Switching Waveforms

Preventing Under and Overdamping With Optimized GaN Gate Switching Waveforms

Discover how optimizing gate resistance and adding RC snubber networks can effectively suppress gate voltage oscillations and overshoots during GaN…


DC Anti-Backflow: Comparing Active ORing and Diode ORing for Reverse Current Protection

DC Anti-Backflow: Comparing Active ORing and Diode ORing for Reverse Current Protection

Reverse-current protection has become an integral part of overall power-system architecture. Selecting the appropriate ORing strategy requires…


Technical Articles Sep 23, 2026 by RECOM
GaN Technology: Now With 2200 V Rating

GaN Technology: Now With 2200 V Rating

The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply engineers grappling with the…


High-Frequency 100 V GaN Motor Drives Push LV Motion Control to the Next Level

High-Frequency 100 V GaN Motor Drives Push LV Motion Control to the Next Level

100 V GaN motor drives enable high-frequency switching up to 100 kHz, delivering greater efficiency and power density, and lower noise than silicon…


From Grid to GPU: Enabling Multi-Megawatt SST Architectures With High-Current SiC Power Modules

From Grid to GPU: Enabling Multi-Megawatt SST Architectures With High-Current SiC Power Modules

AI-driven data centers require power supplies with high efficiency, power density, and reliability. Solid-State Transformer (SST) architectures…


Double Pulse Testing eGuide

Double Pulse Testing eGuide

This step-by-step guide describes the basic concept of double pulse testing (DPT) and the…


Design and Sustainability Strategies for Advanced High Power IGBT Modules

Design and Sustainability Strategies for Advanced High Power IGBT Modules

IGBT modules must optimize losses and reliability to meet green energy demands, using sustainable, lead-free manufacturing and high-density…


Buffer Technology Improves Fast Recovery Diodes for High-Speed IGBTs

Buffer Technology Improves Fast Recovery Diodes for High-Speed IGBTs

This article deals with fast recovery diodes (FRDs), which are tailored for high-speed IGBT applications, aiming to reduce oscillations, voltage…


IGBT Modules With SLC+ Technology: A Strong Fit for Wind Converter Designs

IGBT Modules With SLC+ Technology: A Strong Fit for Wind Converter Designs

Engineered for modern wind converter applications, LV100 IGBT modules with SLC+ technology support high efficiency, improved power-cycling…


GaN Continues To Expand Its Role in AI Power Architectures

GaN Continues To Expand Its Role in AI Power Architectures

Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for multi-kilowatt GPUs and emerging 800 V…


Why CMTI Ratings Can Be Misleading in SiC-Based Systems

Why CMTI Ratings Can Be Misleading in SiC-Based Systems

CMTI ratings often fall short in real-world systems. This article examines how factors such as layout, parasitic effects, and fast switching can…


Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Learn how IceMOS Technology’s MEMS-based superjunction platform pushes power transistor limits, aiming to break the silicon barrier and surpass…


Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Learn why high-frequency SiC switching can distort EV inverter efficiency results and how a…


Industry White Papers In partnership with Hioki
High Reliability Preforms for Module-To-Heatsink Attach

High Reliability Preforms for Module-To-Heatsink Attach

Learn how Innolot 2.0 offers a cost-optimized, highly reliable solder alloy for EV power module heatsink attachment, delivering superior creep…


Isolation Barrier Stress and Partial Discharge in Gate Drivers

Isolation Barrier Stress and Partial Discharge in Gate Drivers

Fast transients can push the gate driver isolation past its normal limits. This can cause partial discharge and, over time, lead to insulation…


A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…