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Buffer Technology Improves Fast Recovery Diodes for High-Speed IGBTs

Buffer Technology Improves Fast Recovery Diodes for High-Speed IGBTs

This article deals with fast recovery diodes (FRDs), which are tailored for high-speed IGBT applications, aiming to reduce oscillations, voltage…


IGBT Modules With SLC+ Technology: A Strong Fit for Wind Converter Designs

IGBT Modules With SLC+ Technology: A Strong Fit for Wind Converter Designs

Engineered for modern wind converter applications, LV100 IGBT modules with SLC+ technology support high efficiency, improved power-cycling…


GaN Continues To Expand Its Role in AI Power Architectures

GaN Continues To Expand Its Role in AI Power Architectures

Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for multi-kilowatt GPUs and emerging 800 V…


Why CMTI Ratings Can Be Misleading in SiC-Based Systems

Why CMTI Ratings Can Be Misleading in SiC-Based Systems

CMTI ratings often fall short in real-world systems. This article examines how factors such as layout, parasitic effects, and fast switching can…


Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Breaking the Silicon Limit and Moving Beyond the SiC Ceiling

Learn how IceMOS Technology’s MEMS-based superjunction platform pushes power transistor limits, aiming to break the silicon barrier and surpass…


Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Why EV Inverter Efficiency Measurements Become Unreliable at Higher SiC Switching Frequencies

Learn why high-frequency SiC switching can distort EV inverter efficiency results and how a…


Industry White Papers In partnership with Hioki
High Reliability Preforms for Module-To-Heatsink Attach

High Reliability Preforms for Module-To-Heatsink Attach

Learn how Innolot 2.0 offers a cost-optimized, highly reliable solder alloy for EV power module heatsink attachment, delivering superior creep…


Isolation Barrier Stress and Partial Discharge in Gate Drivers

Isolation Barrier Stress and Partial Discharge in Gate Drivers

Fast transients can push the gate driver isolation past its normal limits. This can cause partial discharge and, over time, lead to insulation…


A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…


Gate Driver Failure in High dv/dt Converters

Gate Driver Failure in High dv/dt Converters

High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra…


Test Equipment for the Next Generation of Power Semiconductors

Test Equipment for the Next Generation of Power Semiconductors

Modern power semiconductors demand advanced test equipment. As devices optimize for higher voltages and lower losses, precise, robust testing is…


Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…


More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure, boosting token generation and…


Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Learn how 150 V SuperQ MOSFETs boost 204 W converter efficiency greater than 0.8%, cut heat by 2 W, and lower peak temps by 31°C. They improve…


Ruggedness Matters: MOSFETs Built on Mature Planar Technology

Ruggedness Matters: MOSFETs Built on Mature Planar Technology

Many industrial and mission-critical systems continue to depend on MOSFETs with proven robustness and predictable behavior under stress. Learn how…


Isolated DC-DC Power Supplies: Module or Discrete Design?

Isolated DC-DC Power Supplies: Module or Discrete Design?

When is a fully integrated module the better option, and when does a discrete design offer the greater advantage? This story discusses the major…


Technical Articles May 27, 2026 by RECOM
Reverse Recovery Charge Is Not a Constant

Reverse Recovery Charge Is Not a Constant

Reverse recovery charge, QRR, is one of those parameters most power engineers know well. It appears prominently in MOSFET datasheets, it finds its…


800 V SiC Power Module With Integrated Current Measurement

800 V SiC Power Module With Integrated Current Measurement

Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can deliver a compact,…


An Enhanced TO-247 Package Significantly Lowers SiC MOSFET Temperature

An Enhanced TO-247 Package Significantly Lowers SiC MOSFET Temperature

ISOMOS from Analog Power Conversion, LLC, (APC-E)/Luminus [1] improves on the thermal performance of the popular TO-247 package used in many…


GaN Motor Drive Evaluation Boards: EPC9186HC2/HC3 and EPC91202

GaN Motor Drive Evaluation Boards: EPC9186HC2/HC3 and EPC91202

Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article, EPC9186HC2/HC3 and EPC91202,…