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Isolation Barrier Stress and Partial Discharge in Gate Drivers

Isolation Barrier Stress and Partial Discharge in Gate Drivers

Fast transients can push the gate driver isolation past its normal limits. This can cause partial discharge and, over time, lead to insulation…


A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

A Three-Phase 3-level Flying Capacitor DC-AC Converter Based on GaN FETs

This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…


Gate Driver Failure in High dv/dt Converters

Gate Driver Failure in High dv/dt Converters

High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra…


Test Equipment for the Next Generation of Power Semiconductors

Test Equipment for the Next Generation of Power Semiconductors

Modern power semiconductors demand advanced test equipment. As devices optimize for higher voltages and lower losses, precise, robust testing is…


Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…


More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure, boosting token generation and…


Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Improving Efficiency and Thermal Margin in a 204 W Quarter-Brick Converter Using a 150 V MOSFET

Learn how 150 V SuperQ MOSFETs boost 204 W converter efficiency greater than 0.8%, cut heat by 2 W, and lower peak temps by 31°C. They improve…


Ruggedness Matters: MOSFETs Built on Mature Planar Technology

Ruggedness Matters: MOSFETs Built on Mature Planar Technology

Many industrial and mission-critical systems continue to depend on MOSFETs with proven robustness and predictable behavior under stress. Learn how…


Isolated DC-DC Power Supplies: Module or Discrete Design?

Isolated DC-DC Power Supplies: Module or Discrete Design?

When is a fully integrated module the better option, and when does a discrete design offer the greater advantage? This story discusses the major…


Technical Articles May 27, 2026 by RECOM
Reverse Recovery Charge Is Not a Constant

Reverse Recovery Charge Is Not a Constant

Reverse recovery charge, QRR, is one of those parameters most power engineers know well. It appears prominently in MOSFET datasheets, it finds its…


800 V SiC Power Module With Integrated Current Measurement

800 V SiC Power Module With Integrated Current Measurement

Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can deliver a compact,…


An Enhanced TO-247 Package Significantly Lowers SiC MOSFET Temperature

An Enhanced TO-247 Package Significantly Lowers SiC MOSFET Temperature

ISOMOS from Analog Power Conversion, LLC, (APC-E)/Luminus [1] improves on the thermal performance of the popular TO-247 package used in many…


GaN Motor Drive Evaluation Boards: EPC9186HC2/HC3 and EPC91202

GaN Motor Drive Evaluation Boards: EPC9186HC2/HC3 and EPC91202

Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article, EPC9186HC2/HC3 and EPC91202,…


Advanced Partial Discharge Testing for Modern Power Modules

Advanced Partial Discharge Testing for Modern Power Modules

Modern power modules need PD testing that goes beyond traditional standards. This article looks at advanced diagnostic methods that help improve…


Solution-based Manufacturing Platform for Advanced WBG Technologies

Solution-based Manufacturing Platform for Advanced WBG Technologies

Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…


Sensor Placement Errors in High-Voltage Systems That Distort Measurements

Sensor Placement Errors in High-Voltage Systems That Distort Measurements

Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…


Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…


Formic Acid Soldering: Enabling the Next Generation of Power Devices—Part 2

Formic Acid Soldering: Enabling the Next Generation of Power Devices—Part 2

In part 2, we focus on application considerations and take a deeper look at case studies for prevailing solder material alternatives, including…


Why Oscilloscope Bandwidth Specs Are Often Misleading for HV Measurement

Why Oscilloscope Bandwidth Specs Are Often Misleading for HV Measurement

Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.


Sustainability and Energy Efficiency Benefits of Lead-Free Soldering

Sustainability and Energy Efficiency Benefits of Lead-Free Soldering

Learn how lead-free soldering offers a sustainable, energy-efficient solution for power module assembly. It achieves up to 55% energy savings and…