The RP50-AW and RP100-FW series pair ultra-wide input-voltage flexibility with compact footprints and operating temperatures up to 110°C.
Learn how Littelfuse, Daimler Truck AG, and the Steinbeis Institute validated a non-isolated power module architecture that cuts IGBT junction temperatures by up to 83 K and clears the path to higher power densities.
National Semiconductor reduced the analog bar-graph display to a single IC, a handful of LEDs, and one resistor. The level meter was never the same.
The automotive-grade EcoIGBT lineup pairs a 1.55-V saturation voltage with a 7-µs short-circuit withstand time. It comprises 12 discrete parts and 10 bare wafer products.
AI-driven data centers require power supplies with high efficiency, power density, and reliability. Solid-State Transformer (SST) architectures based on SiC power modules enable direct conversion from 34.5 kV medium-voltage grids to 800 V and future 1500 V data center DC infrastructures. This article highlights how high-power SSTs and high-current, highly reliable SiC modules can support multi-megawatt hyperscaler applications while improving efficiency and the key AI performance metric: “Tokens per Second per Megawatt.”
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The PMF2002 multiplexes 12 customer-functionalized graphene sensing channels on one device, while the new Enterprise Reader adds direct electronic readout and real-time analysis.
The eFuse IC brings multi-function circuit protection for 48 V industrial power lines into an industry-leading small package.
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing dose for next-generation space computing hardware.
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