The 60 V and 100 V parts pair low on-resistance with small footprints as industrial systems migrate from 12 V and 24V rails toward 48 V distribution
High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra stress on devices.
An ICF report advises utilities to prioritize location-specific planning and grid-enhancing technologies while grid expansions catch up to demand.
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an expanded lineup of 650 V GaN FETs in industry-standard packages.
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement coverage from precision low-current analysis to high voltage power validation.
Sign-up and receive our weekly updates including the latest news and technical articles.
TDK has added 12 V, 48 V, and 72 V variants to its D1SE DIN-rail power supply series, extending into networking, motor drive, and low-voltage sensor applications.
Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower switching losses, enhancing efficiency and reliability.
The world’s first grid-independent hydrogen power hub, featuring solar and 45 MWh of battery storage, has been validated.
Facebook
Google
GitHub
Linkedin
