The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply engineers grappling with the challenge of higher power density in EVs, AI data centers, BESS, and photovoltaic converters (among others) will be able to stop designing around the voltage-limit problem inherent in conventional GaN switches.
Infineon, Skeleton, Vicor, the University of Birmingham, EPRI, and the Department of Energy are developing technologies for AI data centers, power supplies, fusion energy, and grid reliability.
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and mold compounds to deliver up to 5x power density.
The U.S. Army’s Janus program links five nuclear developers with five military bases, aiming for the first Army-regulated reactor to be operational by September 2028.
100 V GaN motor drives enable high-frequency switching up to 100 kHz, delivering greater efficiency and power density, and lower noise than silicon designs. Two eval boards facilitate the design process.
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The new Level 2 residential EV charger features SmartAmp dynamic load management, enabling 11.5 kW charging without requiring costly home electrical service upgrades.
The automotive-grade EcoIGBT lineup pairs a 1.55-V saturation voltage with a 7-µs short-circuit withstand time. It comprises 12 discrete parts and 10 bare wafer products.
AI-driven data centers require power supplies with high efficiency, power density, and reliability. Solid-State Transformer (SST) architectures based on SiC power modules enable direct conversion from 34.5 kV medium-voltage grids to 800 V and future 1500 V data center DC infrastructures. This article highlights how high-power SSTs and high-current, highly reliable SiC modules can support multi-megawatt hyperscaler applications while improving efficiency and the key AI performance metric: “Tokens per Second per Megawatt.”
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