7th ECPE SiC & GaN User Forum: Potential of Wide Bandgap Semiconductors in Power Electronic Applications

The wide bandgap user forum has established a valuable platform to exchange experience and ideas, to show best practice of power electronic systems with SiC or GaN, to discuss and find out how to appropriately design-in those almost ideal but also challenging components, and which open issues need to be addressed.

Andreas Lindemann

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Further improvements in SiC transistor manufacturing costs in recent times signaled a watershed moment – the turning point for SiC power semiconductors to be successfully mass-produced and implemented in electronic designs for a wide range of applications.

Dr. Peter Wawer

The Dark Side of the Internet

It is still a common belief, that modern electronics and the Internet make our daily life more comfortable and safer. Online banking, email, social networks and endless search opportunities on the Internet eliminate paper checks, letters and faxes and offer us huge amounts of knowledge and connections. But that's only one part of our modern life.

Henning Wriedt

Applied Power Electronics Conference (APEC) 2017

EE Power is covering the Applied Power Electronics Conference (APEC) 2017 live from Tampa, Florida. Stay tuned to this page for real-time insights on events, technical sessions and the exposition.  APEC 2017

Adam Pitel

Mind the Gap! – Wide Band Gap Semiconductors are Gaining Importance

Engineers are increasingly looking to deploy solutions based on wide band gap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) to improve application performance while increasing power density, reducing board space and driving down component count.

Dr. Peter Friedrichs