Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the…
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the controller in motor drive…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs,…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV…
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.
In part two of this article series, we dive deeper into the design details of the solution and present experimental…
In part two of this article series, we dive deeper into the design details of the solution and present experimental results for a 240 VAC input to…
Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A…
Unidirectional switches (UDS) have long served power conversion systems, but they come with inherent limitations. A bidirectional GaN switch…
Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present…
Transistors are the core of power electronics. However, the beneficial properties of wide bandgap devices present challenges for accurate…
Especially when renewable energies are used to supply the grid the use of power semiconductors becomes mandatory. One of…
Especially when renewable energies are used to supply the grid the use of power semiconductors becomes mandatory. One of the key questions in these…
SiC-engineered substrates offer significant benefits over conventional substrates by leveraging device performance thanks…
SiC-engineered substrates offer significant benefits over conventional substrates by leveraging device performance thanks to the use of a highly…
This article examines a new generation of SiC technology, focusing on holistic system efficiency, durability, and system cost.
This article examines a new generation of SiC technology, focusing on holistic system efficiency, durability, and system cost.
The newest voltage class of silicon carbide is enabling a shift in circuit topology for 1500 V-class inverters.
The newest voltage class of silicon carbide is enabling a shift in circuit topology for 1500 V-class inverters.
This article provides insights into easy-to-use, real-time-capable models for the FPGA-based testing of an onboard charger.
This article provides insights into easy-to-use, real-time-capable models for the FPGA-based testing of an onboard charger.
Power electronics are a cornerstone of innovation in automotive, enabling superior performance and efficiency. Add SiC…
Power electronics are a cornerstone of innovation in automotive, enabling superior performance and efficiency. Add SiC and they become even better.
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