As Bodo Arlt, founder of Bodo's Power Systems, celebrates his 70th birthday, we pay tribute to his accomplishments and impact on the power…
August 05, 2023 by Barbara Vergetis Lundin
Learn how to determine the RC high-pass filter's cut-off frequency and transfer function and plot gain/frequency and phase/frequency response…
July 19, 2023 by Amna Ahmad
Electric vehicle (EV) DC fast chargers currently under development have to meet more demanding specifications than today’s installed charger…
July 16, 2023 by Riccardo Collura
When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving circuit is essential to…
July 13, 2023 by Mike Wens
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…
August 22, 2022 by Ahmad Ezzeddine
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The advancement of electric…
June 08, 2022 by Tomas Hudson
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
June 06, 2022 by Xuning Zhang
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
March 01, 2022 by Anup Bhalla, UnitedSiC
In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…
February 02, 2022 by Praneet Bhatnagar
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
December 31, 2021 by Anushree Ramanath
GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…
December 06, 2021 by Iain Mosely
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the demand for electrical energy…
December 06, 2021 by Christian Winter
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package are still the favorable…
November 30, 2021 by Nils Soltau
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…
November 29, 2021 by Ilian Bonov
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
November 03, 2021 by Christian Felgemacher
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…
October 26, 2021 by Ryo Takeda
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
September 12, 2021 by Christian Winter
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
August 03, 2021 by Lorenzo Mari
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
July 30, 2021 by Pavel Gurev
Learn about the principles of and the operation of the field-effect transistor.
July 13, 2021 by Lorenzo Mari
Don't have an EEPower account? Create one now.
Forgot your password? Click here.
