IEC partial standards miss dv/dt, thermal, and micro-PD effects in power modules, limiting their value for inverter-driven reliability prediction.
IEC partial standards miss dv/dt, thermal, and micro-PD effects in power modules, limiting their value for inverter-driven reliability prediction.
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling…
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…
While the first three parts in this article series detailed military and avionic standards and front-end solutions, this…
While the first three parts in this article series detailed military and avionic standards and front-end solutions, this last Part 4 delves into…
E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules…
E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules help ensure efficient designs.
Learn how Slew Rate Control (SRC) gate drive optocouplers mitigate high dv/dt from PWM in VSDs, reducing motor…
Learn how Slew Rate Control (SRC) gate drive optocouplers mitigate high dv/dt from PWM in VSDs, reducing motor overvoltage, EMI, and power loss,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.
Learn the advantages of upgrading from a 2-level inverter to a 3-level inverter for SiC-based EV powertrain designs.
Learn the advantages of upgrading from a 2-level inverter to a 3-level inverter for SiC-based EV powertrain designs.
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller,…
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller, lighter motor drive inverters.
In this article, learn why pulse measurement has advantages over the conventional reactance-based method when it comes to…
In this article, learn why pulse measurement has advantages over the conventional reactance-based method when it comes to determining the…
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a…
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…
Learn how silicon carbide power modules can ensure energy efficiency and weight optimization in hybrid-propulsion trains.
Learn how silicon carbide power modules can ensure energy efficiency and weight optimization in hybrid-propulsion trains.
Learn how Littelfuse addresses the planar MOSFET gap with its Polar MOSFET portfolio, offering rugged and thermally…
Learn how Littelfuse addresses the planar MOSFET gap with its Polar MOSFET portfolio, offering rugged and thermally reliable products that are…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
Traditional DC-DC converters struggle with EV power demands. Learn how modular SAC converters provide fast transient…
Traditional DC-DC converters struggle with EV power demands. Learn how modular SAC converters provide fast transient response, high peak power, and…
Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.
Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.
This article describes key factors in selecting and setting up power modules amid key factors such as harsh environments,…
This article describes key factors in selecting and setting up power modules amid key factors such as harsh environments, field conditions,…
Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and…
Learn how Mitsubishi’s in-house designed & developed efficient semiconductor bare-dies (SiC MOSFET & Si RC-IGBT) and compact…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs,…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through…
Learn about Mitsubishi’s XB-Series HV-IGBT modules. They offer lower switching losses and enhanced reliability through 7th-gen Si IGBT and RFC…
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