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Powering the SiC Revolution with Vertical Integration

Powering the SiC Revolution with Vertical Integration

Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.


Fighting Bipolar Degradation With High-Performance SiC Substrates

Fighting Bipolar Degradation With High-Performance SiC Substrates

SiC-engineered substrates offer significant benefits over conventional substrates by leveraging device performance thanks to the use of a highly…


2 kV SiC Power Modules Transform 1500 V Systems

2 kV SiC Power Modules Transform 1500 V Systems

The newest voltage class of silicon carbide is enabling a shift in circuit topology for 1500 V-class inverters.


Enhancing xEV Powertrains With Advanced Trench Tech

Enhancing xEV Powertrains With Advanced Trench Tech

Power electronics are a cornerstone of innovation in automotive, enabling superior performance and efficiency. Add SiC and they become even better.


Navigating the Evolving Patent Landscape in SiC and GaN Technologies

Navigating the Evolving Patent Landscape in SiC and GaN Technologies

Silicon Carbide and Gallium Nitride technologies are significantly reshaping the power electronics industry—from electric vehicles to renewable…


SiC-Based E-Fuses vs. Traditional Fuses: A Modern Comparative Analysis

SiC-Based E-Fuses vs. Traditional Fuses: A Modern Comparative Analysis

Electronic circuit interruption solutions protect the wiring and limit short-circuit let-through current and energy delivered to a faulted load.…


Solving SiC Power Component Size Challenges in xEV Inverters

Solving SiC Power Component Size Challenges in xEV Inverters

Silicon carbide power components are increasingly popular in electrical drive systems, but achieving low losses in a compact size can be difficult.


Designing Robust SiC Power Devices in Extreme Thermal Conditions

Designing Robust SiC Power Devices in Extreme Thermal Conditions

High power densities lead to high operating temperatures, but what does this mean for SiC MOSFETs regarding critical parameters like VGS(th),…


EVs, GaN, SiC, AI, ICs: 2024 Was All About the Acronyms

EVs, GaN, SiC, AI, ICs: 2024 Was All About the Acronyms

EEPower’s collaboration with Bodo's Power Systems has yielded a wealth of technical articles addressing critical industry trends and…


Enabling Industrial E-Mobility With SiC Technology

Enabling Industrial E-Mobility With SiC Technology

Powering industrial e-mobility across land, sky, water, and rail. Following closely behind the adoption of electric vehicles, new transportation…


10 Highlights From the EEPower/Bodo’s Alliance

10 Highlights From the EEPower/Bodo’s Alliance

From inductor circuits to SiC and GaN to Moore’s Law, check out these must-reads from EEPower’s exclusive partnership with Bodo’s Power Systems.


Bringing Reliability to SiC Power Modules

Bringing Reliability to SiC Power Modules

Harnessing the unique electrical advantages of wide-bandgap silicon carbide (SiC) in commercial applications requires addressing reliability…


Using WBG Switches to Reduce Motor Drive System Losses

Using WBG Switches to Reduce Motor Drive System Losses

An experimental approach to investigate the impact of higher switching frequencies on the inverter and motor efficiency using SiC and GaN


Pushing Module Power Density to the Limit

Pushing Module Power Density to the Limit

Full SiC MOSFET modules have clear performance benefits, especially where high power density is required, but how can the highest possible power…


SiC LinPak Designed for Improved Switching Performance, Reliability

SiC LinPak Designed for Improved Switching Performance, Reliability

Each day that we wake up and turn on a light, the coffee machine, or electric stove to prepare breakfast, we expect all the electric motors,…


Q&A: Inside SiC Technology from Upstate New York

Q&A: Inside SiC Technology from Upstate New York

Wolfspeed has opened its Mohawk Valley Silicon Carbide fabrication facility in Marcy, N.Y. The 200 mm wafer fab aims to lead the transition from…


Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…


Traction-Inverter Development Platform Eases Road to Future Mobility

Traction-Inverter Development Platform Eases Road to Future Mobility

The momentum towards electrified mobility is gathering as governments commit to ending sales of petrol and diesel cars around the 2030 timeframe.…


Focusing on SiC Technology With WeEn Semi’s CEO

Focusing on SiC Technology With WeEn Semi’s CEO

Founded in Aug 2015, WeEn Semiconductors is committed to improving power conversion efficiency and providing superior power products for home…


CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background, starting with the components…