Latest Wide Bandgap Technical Articles

This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power…

This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.

This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power…

This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power converters applications.

This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in…

This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in SiC MOSFET-based power…

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a…

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into…

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are…

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…

GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due…

GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…

In the field of power electronics, especially within the automotive and railway segments, the miniaturization and…

In the field of power electronics, especially within the automotive and railway segments, the miniaturization and heightened efficiency of…

Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power…

Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…

This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G…

This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G dielectric and nickel…

The article focuses on high-voltage SiC-modules and gives insights to features and applications.

The article focuses on high-voltage SiC-modules and gives insights to features and applications.

This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its…

This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its ultimate form, the μMaxPak…

This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.

This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.

This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters…

This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…

This article focuses on presenting the benefits of a newly developed SiC power module and the utilization of this module…

This article focuses on presenting the benefits of a newly developed SiC power module and the utilization of this module in a powertrain inverter

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power…

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.