Latest Wide Bandgap Technical Articles

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work…

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best…

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is…

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is harvesting the advantages SiC…

This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP…

This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and…

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.

This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal…

This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and…

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN…

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

This article introduces technologies enabling developers to significantly reduce the switching losses in power…

This article introduces technologies enabling developers to significantly reduce the switching losses in power converters, thus reducing costs.

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2…

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over…

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the…

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in…

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout…

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed…

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.