This article examines the use of power semiconductors in a low voltage drive with the general architecture.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
High-performance IGBT modules switch currents in the kA range, whereby unwanted and in some cases harmful voltage…
High-performance IGBT modules switch currents in the kA range, whereby unwanted and in some cases harmful voltage overshoots can occur due to DC…
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the…
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
The peak current is one of the most important parameters in gate driver datasheets. Learn how to best find the peak…
The peak current is one of the most important parameters in gate driver datasheets. Learn how to best find the peak current of a gate driver with…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for…
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…
Learn about the traits of the rectifying p-n junctions in semiconductors.
Learn about the traits of the rectifying p-n junctions in semiconductors.
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive…
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
The presence and properties of electrons and holes are fundamental to understand how semiconductor devices operate
The presence and properties of electrons and holes are fundamental to understand how semiconductor devices operate
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…
The manufacture of crystalline silicon modules involves fabricating silicon wafers, transforming the wafers into cells,…
The manufacture of crystalline silicon modules involves fabricating silicon wafers, transforming the wafers into cells, and assembling cells into…
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a…
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…
When a particular element’s atoms are far apart, each individual atom exhibits some permissible energy levels. But,…
When a particular element’s atoms are far apart, each individual atom exhibits some permissible energy levels. But, with atoms closely packed in…
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