This article highlights the importance and benefits of cleaning power modules before bonding to ensure long-term reliability.
January 23, 2018 by Thomas Kucharek
This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT Power Modules.
January 23, 2018 by Eugen Wiesner
This article discusses techniques on designs to increase the efficiency of conversion at high power by utilizing improvements of converters.
September 18, 2017 by Anatoliy Tsyrganovich
This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.
May 24, 2017 by Francois Perraud
This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance and reliability.
May 02, 2017 by Abdus Sattar
This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.
March 09, 2017 by Andrew Leake
This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.
March 03, 2017 by Tom Adams
This article describes the basic points of the X-Series design including the improvements contributing to a safe operation of the device.
February 21, 2017 by Eugen Wiesner
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…
February 13, 2017 by Robinson Law
This article discusses the main features which make the IGCT an attractive option for high power applications with respect to the technology…
May 31, 2016 by Umamaheswara Vemulapati
This article describes a new 8.5 kV low loss thyristor family designed for industrial applications with full blocking capability at 50Hz/60Hz…
May 19, 2016 by Jens Przybilla
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
May 10, 2016 by Scott Ramsay
This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.
February 10, 2016 by Eugen Wiesner
This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.
January 21, 2016 by Bill Alexander
This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.
September 01, 2015 by Matt O'Grady
This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease of transition.
November 17, 2014 by Neil Markham
This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings, dynamics and noise…
November 15, 2014 by Hubert Kerstin
This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product costs and effect against…
November 09, 2014 by Alex Lidow
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