Latest Power FETs Technical Articles

This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as…

This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as well as their advantages…

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short…

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…

This article highlights the importance and benefits of cleaning power modules before bonding to ensure long-term reliability.

This article highlights the importance and benefits of cleaning power modules before bonding to ensure long-term reliability.

This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT…

This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT Power Modules.

This article discusses techniques on designs to increase the efficiency of conversion at high power by utilizing…

This article discusses techniques on designs to increase the efficiency of conversion at high power by utilizing improvements of converters.

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed…

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.

This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance…

This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance and reliability.

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure…

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of…

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.

This article describes the basic points of the X-Series design including the improvements contributing to a safe…

This article describes the basic points of the X-Series design including the improvements contributing to a safe operation of the device.

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…

This article discusses the main features which make the IGCT an attractive option for high power applications with…

This article discusses the main features which make the IGCT an attractive option for high power applications with respect to the technology…

This article describes a new 8.5 kV low loss thyristor family designed for industrial applications with full blocking…

This article describes a new 8.5 kV low loss thyristor family designed for industrial applications with full blocking capability at 50Hz/60Hz…

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET…

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.

This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at…

This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new…

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.

This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high…

This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease…

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease of transition.

This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings,…

This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings, dynamics and noise…