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1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…


On-Chip Electrostatic Discharge Protection for ICs

On-Chip Electrostatic Discharge Protection for ICs

Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.


Interpreting and Validating Dynamic Characteristics for Wide Bandgap Power Device Data Sheets

Interpreting and Validating Dynamic Characteristics for Wide Bandgap Power Device Data Sheets

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.


Chip-Embedded Technology Enables High Current Density Power

Chip-Embedded Technology Enables High Current Density Power

This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…


How to Achieve Fast Switching with a High-Voltage Isolated Driver IC

How to Achieve Fast Switching with a High-Voltage Isolated Driver IC

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…


Highly Efficient SiC Power Devices for a Wide Range of Applications

Highly Efficient SiC Power Devices for a Wide Range of Applications

This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…


Coreless Transformers Isolate SiC Gate Drivers for EV and Industrial Applications

Coreless Transformers Isolate SiC Gate Drivers for EV and Industrial Applications

This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…


Dynamic Characterization of GaN Power Semiconductor Devices

Dynamic Characterization of GaN Power Semiconductor Devices

This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.


Modern Clamping Systems for Testing Power Semiconductor Devices

Modern Clamping Systems for Testing Power Semiconductor Devices

This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…


Hard Paralleling SiC MOSFET-Based Power Modules

Hard Paralleling SiC MOSFET-Based Power Modules

The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.


Selecting and Operating Switching Power Transistors: SiC Components

Selecting and Operating Switching Power Transistors: SiC Components

In this third article of the series, we will look at SiC power transistors. 


Silicon Carbide Current-Limiting Devices

Silicon Carbide Current-Limiting Devices

This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.


SiC MOSFET Intelligent Power Modules for E-mobility

SiC MOSFET Intelligent Power Modules for E-mobility

An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for traction inverters, with some…


Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress

Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress

This article highlights avalanche ruggedness of discrete 1.2 kV SiC MPS diodes.


AI-Powered Architecture Unleashes Future Silicon IGBT and SiC Improvements

AI-Powered Architecture Unleashes Future Silicon IGBT and SiC Improvements

This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the Auxiliary Resonant…


Why are Ultra-Low On-Resistance SiC FETs Hot?

Why are Ultra-Low On-Resistance SiC FETs Hot?

This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics and application…


 Value Enhancement of Full SiC 3.3kV Power Module

Value Enhancement of Full SiC 3.3kV Power Module

This article focuses on the 2-level inverter and use this topology to exhibit the results


Scalability of SiC Near Chip-Scale Packages for Electric Vehicle & Locomotive Traction

Scalability of SiC Near Chip-Scale Packages for Electric Vehicle & Locomotive Traction

This article introduces the µMaxPak, a proprietary power QFN package using automated low-cost QFN assembly technology.