When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet…
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…
This article discusses the challenges that thermal management raises due to increased power density, especially with…
This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which…
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs…
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection…
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance…
This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high…
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices…
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and…
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article describes the steps of development and research carried out to design a clamping system for disc…
This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.
In this third article of the series, we will look at SiC power transistors.
In this third article of the series, we will look at SiC power transistors.
This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.
This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.
An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for…
An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for traction inverters, with some…
This article highlights avalanche ruggedness of discrete 1.2 kV SiC MPS diodes.
This article highlights avalanche ruggedness of discrete 1.2 kV SiC MPS diodes.
Facebook
Google
GitHub
Linkedin