This article focuses on the AC-to-DC stage with power factor correction
This article focuses on the AC-to-DC stage with power factor correction
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC)…
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.
This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power…
This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power modules with High peak gate…
This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power…
This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power converters with high…
This article highlights Keysight PD1500A Dynamic Power Device Analyzer/DPT as next generation dynamic test platform for…
This article highlights Keysight PD1500A Dynamic Power Device Analyzer/DPT as next generation dynamic test platform for power semiconductor device.
This article features JSC Proton-Electrotex research and development to find structural and technological solutions…
This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…
This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM…
This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM Europe 2019 press conference.
This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules…
This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules that contains DC/DC…
This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power…
This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.
This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in…
This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in SiC MOSFET-based power…
This article examines the effects and explains how they can be mitigated along with results of experiments to evaluate…
This article examines the effects and explains how they can be mitigated along with results of experiments to evaluate stress and damage,…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.
This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction…
This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…
This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a…
This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.
UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds
UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds
ROHM announced the availability of a new lineup of high power wide terminal thick-film chip resistors ideal for current…
ROHM announced the availability of a new lineup of high power wide terminal thick-film chip resistors ideal for current detection in a variety of…
This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into…
This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads
Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are…
Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G dielectric and nickel…
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