This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
March 09, 2021 by Nigel Springett
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
February 22, 2021 by Alex Lidow
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
February 15, 2021 by Anup Bhalla, UnitedSiC
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…
January 20, 2021 by Vladimir Scarpa
This article discusses WeEn Semiconductor's high voltage SCRs its applications and process technology.
July 21, 2020 by Brian Xie
With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the choice of the optimum…
June 23, 2020 by Artur Seibt
This article features Infineon USB-PD adapters that supports a wide range of output voltages and power up to 60 W for charging different end…
November 25, 2019 by Manfred Schlenk
This article highlights ADI LTC3892 high voltage controllers with an ability to reduce power losses by adjusting the gate voltage of MOSFETs and…
October 23, 2019 by Victor Khasiev
This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…
August 09, 2019 by Sergey Antonov
This article highlights Mitsubishi Electric Europe B.V LV100 High Power IGBT Modules for Wind Converter, Photovoltaic Inverter and Motor Drives.
May 13, 2019 by Thomas Radke
This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power converters applications.
April 16, 2019 by Ronald Barr
ROHM announced the availability of a new lineup of high power wide terminal thick-film chip resistors ideal for current detection in a variety of…
January 09, 2019 by ROHM
There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control…
November 21, 2018 by JC Sun
This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.
July 02, 2018 by Shmuel (Sam) Ben-Yaakov
This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as well as their advantages…
June 21, 2018 by David Reusch
IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…
May 11, 2018 by Abdus Sattar
This article highlights the importance and benefits of cleaning power modules before bonding to ensure long-term reliability.
January 23, 2018 by Thomas Kucharek
This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT Power Modules.
January 23, 2018 by Eugen Wiesner
This article discusses techniques on designs to increase the efficiency of conversion at high power by utilizing improvements of converters.
September 18, 2017 by Anatoliy Tsyrganovich
This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.
May 24, 2017 by Francois Perraud
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