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Designing Robust SiC Power Devices in Extreme Thermal Conditions

Designing Robust SiC Power Devices in Extreme Thermal Conditions

High power densities lead to high operating temperatures, but what does this mean for SiC MOSFETs regarding critical parameters like VGS(th),…


Enhancing Reliability and Compatibility With E-Mode GaNFETs

Enhancing Reliability and Compatibility With E-Mode GaNFETs

Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and compatibility of gate driving for…


Rethinking Soft-Switching Efficiency With Silicon Carbide

Rethinking Soft-Switching Efficiency With Silicon Carbide

This article examines how silicon carbide differs from silicon, and how circuit techniques such as soft switching can be optimized beyond what is…


How Power Designs Benefit From Carbon Advances

How Power Designs Benefit From Carbon Advances

Carbon will play an increasingly important role in the future of electronics. This article explores advances in material science, where carbon is…


New MOSFET Design Boosts Application Efficiency

New MOSFET Design Boosts Application Efficiency

MOSFET devices should improve figures of merit. A new cell design exploring a three-dimensional charge compensation fits the bill.


Adapting MOSFET Gate Drivers for Use With GaN FETs

Adapting MOSFET Gate Drivers for Use With GaN FETs

This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic gate drivers with GaN FETs,…


Timeless Tech Wisdom: Foundational Concepts to Advanced Calculations

Timeless Tech Wisdom: Foundational Concepts to Advanced Calculations

Whether it’s FET foundations or calculating transformer turns ratios, these are the EEPower technical articles engineers read time and again.


A Toast to Bodo: Celebrating 70 Years

A Toast to Bodo: Celebrating 70 Years

As Bodo Arlt, founder of Bodo's Power Systems, celebrates his 70th birthday, we pay tribute to his accomplishments and impact on the power…


Determining Cut-Off Frequency and Transfer Function of RC High-Pass Filters

Determining Cut-Off Frequency and Transfer Function of RC High-Pass Filters

Learn how to determine the RC high-pass filter's cut-off frequency and transfer function and plot gain/frequency and phase/frequency response…


Analyzing the Options: EV Fast Charging Bi-Directional Topologies

Analyzing the Options: EV Fast Charging Bi-Directional Topologies

Electric vehicle (EV) DC fast chargers currently under development have to meet more demanding specifications than today’s installed charger…


Optimum GaN Gate Control for Greater Performance Gains

Optimum GaN Gate Control for Greater Performance Gains

When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving circuit is essential to…


High-Voltage Direct Current: A History of Innovation

High-Voltage Direct Current: A History of Innovation

High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…


Drive Safe: Isolated Gate Drivers for High-Power Applications

Drive Safe: Isolated Gate Drivers for High-Power Applications

New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The advancement of electric…


Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…


Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…


Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…


Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Using GaAs Diodes to Reduce Cost in High Power LLC Converters

Using GaAs Diodes to Reduce Cost in High Power LLC Converters

GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…


High Power Phase Controlled Thyristor (PCT) and Rectifier Diode Platform

High Power Phase Controlled Thyristor (PCT) and Rectifier Diode Platform

Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the demand for electrical energy…


High-Voltage IGBT Modules for High-Power High-Reliability Applications

High-Voltage IGBT Modules for High-Power High-Reliability Applications

When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package are still the favorable…