Latest Semiconductors & ICs Technical Articles

This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power…

This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power cycling and thermal…

This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical…

This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical concepts and benefits.

This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and…

This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.

This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…

This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…

This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart…

This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart gate-driver.

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC…

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.

This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT…

This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT modules in power…

This article offers methods overcoming the limitations of Schottky diode rectifier designs without the complexity of…

This article offers methods overcoming the limitations of Schottky diode rectifier designs without the complexity of traditional synchronous…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC…

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC enhancement devices.

This article introduces the features and benefits of the IGBT WebSim, a new web-based simulation feature in International…

This article introduces the features and benefits of the IGBT WebSim, a new web-based simulation feature in International Rectifier's website.

This article provides insight into the development of this new flexible high-power platform and demonstrates how…

This article provides insight into the development of this new flexible high-power platform and demonstrates how Infineon’s approach.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article discusses the non-destructive inspecting of IGBT modules for internal structural defects such as voids,…

This article discusses the non-destructive inspecting of IGBT modules for internal structural defects such as voids, non-bonds, delamination and…

This article discusses simulation of resonant LLC converter using PLECS that permits analysis of transient effects from…

This article discusses simulation of resonant LLC converter using PLECS that permits analysis of transient effects from multiple physical domains.

This article discusses the future generation of IGBT modules which will employ Enhanced Trench ET-IGBTs and Field Charge…

This article discusses the future generation of IGBT modules which will employ Enhanced Trench ET-IGBTs and Field Charge Extraction and their…

This article discusses the potential of eGaN technology in various applications such as outer space, machine interface,…

This article discusses the potential of eGaN technology in various applications such as outer space, machine interface, electricity and medicine.

This article discusses Danfoss Bond Buffer Technology and its impact on improving power density and lifetime of power…

This article discusses Danfoss Bond Buffer Technology and its impact on improving power density and lifetime of power modules without changing the…

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease…

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease of transition.