EEPower

Latest Semiconductors & ICs Technical Articles

Categories

Boost Your System Defining the Future of IGBT HighPower Modules

Boost Your System Defining the Future of IGBT HighPower Modules

This article provides insight into the development of this new flexible high-power platform and demonstrates how Infineon’s approach.


A High Current Low Inductance Wide Bandgap Power Module for High Performance Motor Drive Applications

A High Current Low Inductance Wide Bandgap Power Module for High Performance Motor Drive Applications

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.


Automated Acoustic Inspection for IGBT Modules

Automated Acoustic Inspection for IGBT Modules

This article discusses the non-destructive inspecting of IGBT modules for internal structural defects such as voids, non-bonds, delamination and…


LLC Resonant Converter Simulation Using PLECS

LLC Resonant Converter Simulation Using PLECS

This article discusses simulation of resonant LLC converter using PLECS that permits analysis of transient effects from multiple physical domains.


Enhanced Trench IGBTs and Field Charge Controlled Diode: The Next Leap in IGBT and Diode Performance

Enhanced Trench IGBTs and Field Charge Controlled Diode: The Next Leap in IGBT and Diode Performance

This article discusses the future generation of IGBT modules which will employ Enhanced Trench ET-IGBTs and Field Charge Extraction and their…


eGaN Technology Transforming the Future

eGaN Technology Transforming the Future

This article discusses the potential of eGaN technology in various applications such as outer space, machine interface, electricity and medicine.


Bond Buffer – Increase Power Density and Lifetime without Changing the System

Bond Buffer – Increase Power Density and Lifetime without Changing the System

This article discusses Danfoss Bond Buffer Technology and its impact on improving power density and lifetime of power modules without changing the…


High Power Density Dual  nHPD2 Packaging Generation

High Power Density Dual nHPD2 Packaging Generation

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease of transition.


Where is the Journey Headed? The Future of High-Power Semiconductors

Where is the Journey Headed? The Future of High-Power Semiconductors

This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings, dynamics and noise…


Pushing Hall Effect Technology to New Limits

Pushing Hall Effect Technology to New Limits

This article discusses how to use LEM uses Hall Effect Technology to manage fluxgate and improve efficiency, productivity and performance in many…


The eGaN FET Supply Chain

The eGaN FET Supply Chain

This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product costs and effect against…


Thermal Efficiency of Chipscale Packaging for eGaN® FETs

Thermal Efficiency of Chipscale Packaging for eGaN® FETs

This article discusses the thermal performance of the chipscale package and compare with the state-of-the-art power MOSFET packaging available today.


The Expanding Markets for GaN Technology

The Expanding Markets for GaN Technology

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better than their silicon-counterparts.