Liutauras Storasta received the B.Sc. degree from Vilnius University, Vilnius, Lithuania, in 1998, and the Ph.D. degree from the Linköping University, Linköping, Sweden, in 2003. From 2005 to 2007, he was a Research Associate in the Central Research Institute for Electric Power Industry (CRIEPI), Yokosuka, Japan, where he was involved in the improvement of silicon carbide material and devices. Since 2007, he has been with ABB Semiconductors, Lenzburg, Switzerland, where he has been involved in the development of silicon power IGBT and diode. His current research interests include design and applications of high-power semiconductor devices.