Latest Wide Bandgap Technical Articles

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in…

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout…

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed…

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that…

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency…

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure…

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and…

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and…

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.

This article introduced important considerations that come into play when measuring the efficiency and loss of inverters…

This article introduced important considerations that come into play when measuring the efficiency and loss of inverters and motors.

This article presents general module design considerations and first results on switching characteristics of LinPaks in…

This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance…

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.

This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace…

This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.

This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.

This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.

This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing…

This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…