This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…
This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…
This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency…
This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.
This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure…
This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.
> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and…
> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…
This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power…
This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…
This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and…
This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.
This article introduced important considerations that come into play when measuring the efficiency and loss of inverters…
This article introduced important considerations that come into play when measuring the efficiency and loss of inverters and motors.
This article presents general module design considerations and first results on switching characteristics of LinPaks in…
This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance…
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace…
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing…
This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power…
This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power circuitry and its benefits.
This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics…
This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…
This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon…
This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.
This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced…
This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…