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A Practical Study on Three-Level Hybrid SiC/Si Inverters

A Practical Study on Three-Level Hybrid SiC/Si Inverters

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…


Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…


State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…


Step Up to Half-Bridge GaN Power ICs

Step Up to Half-Bridge GaN Power ICs

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.


IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.


The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…


GaN Transistor Gate Drive Optocouplers

GaN Transistor Gate Drive Optocouplers

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…


The Creation of Silicon Carbide  Revolutionary Semiconductor

The Creation of Silicon Carbide Revolutionary Semiconductor

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…


From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.


High-Precision Power Measurement of SiC Inverters

High-Precision Power Measurement of SiC Inverters

This article introduced important considerations that come into play when measuring the efficiency and loss of inverters and motors.


LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.


Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.


Simplify Power Electronics Design with GaN Power ICs

Simplify Power Electronics Design with GaN Power ICs

This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.


Overcoming Challenges in Driving Silicon Carbide Power Modules

Overcoming Challenges in Driving Silicon Carbide Power Modules

This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.


SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…


Silicon and GaN Transistor Comparison: Optimized Inverter Design

Silicon and GaN Transistor Comparison: Optimized Inverter Design

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.


SiC for safeguarding AC and DC power circuitry

SiC for safeguarding AC and DC power circuitry

This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power circuitry and its benefits.


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…