This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.
This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.
This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating…
This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating (IH)…
This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous…
This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous generation thyristor.
This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature…
This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature operation.
This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for…
This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for designing and testing circuitry.
In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field…
In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be…
This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.
This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.
This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the…
This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.
This article discusses the features and advantages of intelligent power modules in terms of costs, size, thermal and…
This article discusses the features and advantages of intelligent power modules in terms of costs, size, thermal and overcurrent protection.
This article discusses the benefits and advantages of CoolMOS CFD2 in terms of efficiency in motor drive applications and…
This article discusses the benefits and advantages of CoolMOS CFD2 in terms of efficiency in motor drive applications and gives recommended layouts.
This article discusses how the implementation of three module approach can help lower the total cost of ownership and…
This article discusses how the implementation of three module approach can help lower the total cost of ownership and maximum junction temperature.
This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.
This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.
This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in…
This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…
This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout…
This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…
This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and…
This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and AlSiC Baseplate in IGBT…
This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in…
This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in the new THB-HVDC test.
This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction…
This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction applications.
This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed…
This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.
This article features the 7th generation IGBT Module based on SLC (SoLid Cover)-Technology with high reliability and high…
This article features the 7th generation IGBT Module based on SLC (SoLid Cover)-Technology with high reliability and high thermal conductivity.