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COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


An Intelligent IGBT Module for Single-Ended Induction Heating Applications: All-in-One Solution for Induction Cooking System

An Intelligent IGBT Module for Single-Ended Induction Heating Applications: All-in-One Solution for Induction Cooking System

This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating (IH)…


A New Thyristor Platform Optimized for 10 GW UHVDC Transmission

A New Thyristor Platform Optimized for 10 GW UHVDC Transmission

This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous generation thyristor.


Comparing Power Transistors Operating at HighTemperature Tj200C Knowing the Transistors in Designs

Comparing Power Transistors Operating at HighTemperature Tj200C Knowing the Transistors in Designs

This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature operation.


Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for designing and testing circuitry.


Current Progress at Si IGBTs in the Voltage Range up to 1200V

Current Progress at Si IGBTs in the Voltage Range up to 1200V

In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be…


Side Wall Gate - Moving on from Trench

Side Wall Gate - Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.


Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.


“PFC + Inverter” Intelligent Power Module in 21mm x 36mm for Low Power Drives

“PFC + Inverter” Intelligent Power Module in 21mm x 36mm for Low Power Drives

This article discusses the features and advantages of intelligent power modules in terms of costs, size, thermal and overcurrent protection.


EiceDRIVER and CoolMOS CFD2 Join for High Efficiency in Refrigeration

EiceDRIVER and CoolMOS CFD2 Join for High Efficiency in Refrigeration

This article discusses the benefits and advantages of CoolMOS CFD2 in terms of efficiency in motor drive applications and gives recommended layouts.


Half-Bridge vs. Sixpack Modules for Motor Drives

Half-Bridge vs. Sixpack Modules for Motor Drives

This article discusses how the implementation of three module approach can help lower the total cost of ownership and maximum junction temperature.


Reliable SiC Power Devices for Automotive Applications

Reliable SiC Power Devices for Automotive Applications

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.


A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.


1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…


SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and AlSiC Baseplate in IGBT…


High Humidity Robustness of ABB’s IGBTs and Diodes

High Humidity Robustness of ABB’s IGBTs and Diodes

This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in the new THB-HVDC test.


Configurable Gate Drives for nHPD2

Configurable Gate Drives for nHPD2

This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction applications.


New Contender for the Power Transistor Throne

New Contender for the Power Transistor Throne

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.


New Horizons in Thermal Cycling Capability Realized with the 7th gen. IGBT Module Based on SLC-Technology

New Horizons in Thermal Cycling Capability Realized with the 7th gen. IGBT Module Based on SLC-Technology

This article features the 7th generation IGBT Module based on SLC (SoLid Cover)-Technology with high reliability and high thermal conductivity.