This article features the new Infineon HybridPACK Drive IGBT module characterized with compact design and high efficiency for e-mobility applications.
This article features the new Infineon HybridPACK Drive IGBT module characterized with compact design and high efficiency for e-mobility applications.
This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance…
This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance and reliability.
This article proposed and discussed the thermal and circuit benefits of a low rated power application without heat-sink…
This article proposed and discussed the thermal and circuit benefits of a low rated power application without heat-sink approach using 600V 4A…
This article features the benefits of operating at high frequencies and the impact of dead-time and inductance value on…
This article features the benefits of operating at high frequencies and the impact of dead-time and inductance value on both operation and control…
This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that…
This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…
This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency…
This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…
This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power…
This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power density and efficiency.
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…
This article highlights ABB welding diodes that is designed for such extreme load and set new power cycling records for…
This article highlights ABB welding diodes that is designed for such extreme load and set new power cycling records for all power semiconductor…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.
For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape.…
For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape. However at higher…
This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design…
This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design platform to another.
This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure…
This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.
This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable…
This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…
> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and…
> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…
This article describes the basic points of the X-Series design including the improvements contributing to a safe…
This article describes the basic points of the X-Series design including the improvements contributing to a safe operation of the device.
This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in…
This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in railway applications.
This article describes the challenges of inverter-based induction cooking and introduces a new technology that meets the…
This article describes the challenges of inverter-based induction cooking and introduces a new technology that meets the technical and price…
This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum…
This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum discs using the silver…
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…
This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…
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