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A Gate Driving Design Guide for CoolSiC MOSFETs

A Gate Driving Design Guide for CoolSiC MOSFETs

This article highlights Infineon Technologies CoolSiC MOSFET device with its gate-drive designs advantages against MOSFET parasitic turn-ON effect.


The Next Generation of SiC Power Modules

The Next Generation of SiC Power Modules

This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power converters with high…


Using MOSFET Controllers to Drive GaN EHEMTs

Using MOSFET Controllers to Drive GaN EHEMTs

This article discusses the difference of Si MOSFET with separate controller driver, an integrated GaN/driver, and GaN power transistors with a…


The Double Pulse Test System for Power Semiconductor Dynamic Characterization

The Double Pulse Test System for Power Semiconductor Dynamic Characterization

This article highlights Keysight PD1500A Dynamic Power Device Analyzer/DPT as next generation dynamic test platform for power semiconductor device.


High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…


Design Automation Conference: An Important Update for the Electronics Industry

Design Automation Conference: An Important Update for the Electronics Industry

This article highlights Bodo’s Power Systems US-Correspondent this year 56th Design Automation Conference (DAC) plus Exhibition took place in Las…


A New Dual-in-Line Surface Mountable IPM for Motor Drive Applications

A New Dual-in-Line Surface Mountable IPM for Motor Drive Applications

This article features Alpha and Omega Semiconductor dual-in-line SMD-type intelligent power module (IPM) specialized for low-power BLDC motor-drive…


Thermal Resistance and Capacitance are Critical Parameters of Power Devices

Thermal Resistance and Capacitance are Critical Parameters of Power Devices

This article highlights Dr. – Ing. Seibt of Vienna thermal resistance and capacitance parameters in power devices that deals with GaN and SiC…


Three-Level NPC Topology with Tandem Diodes: The Cost-Efficient Solution for 1500 VDC, Multi-String Solar Inverters

Three-Level NPC Topology with Tandem Diodes: The Cost-Efficient Solution for 1500 VDC, Multi-String Solar Inverters

This article highlights Vincotech GmbH Neutral Point Clamped (NPC) topology with tandem diodes provides a reliable solution for multi-string solar…


GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.


Optimized Inverter Design by IPMs and SiC-SBDs

Optimized Inverter Design by IPMs and SiC-SBDs

This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM Europe 2019 press conference.


Powering the World with Technology that Achieves More and Consumes Less

Powering the World with Technology that Achieves More and Consumes Less

This article highlights Roland R. Ackermann discussion about Infineon power products at PCIM2019 such as CoolSiC, CoolGaN devices, and new…


Gate Drivers for SiC-MOSFET/IGBT Power Modules and Their Advantages

Gate Drivers for SiC-MOSFET/IGBT Power Modules and Their Advantages

This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules that contains DC/DC…


11 Technical FAQs About the Danfoss DCMTechnology Platform for Automotive Traction Inverters

11 Technical FAQs About the Danfoss DCMTechnology Platform for Automotive Traction Inverters

This article features Danfoss Silicon Power GmbH DCM™Technology Platform for Automotive Traction Inverters that covers an interview with…


A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications

A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications

This article highlights ABB Semiconductors Reverse-Conducting Integrated Gate Commuted Thyristors platform or RC-IGCT in high power semiconductor…


Benchmarking Topologies for DC-to-DC Converters, the Heart of Off-Board Chargers

Benchmarking Topologies for DC-to-DC Converters, the Heart of Off-Board Chargers

This article highlights Vincotech System Architectures and Topologies for DC-to-DC Converters that are the heart of off-board chargers.


The Next Generation of High Power IGBT Modules

The Next Generation of High Power IGBT Modules

This article highlights Mitsubishi Electric Europe B.V LV100 High Power IGBT Modules for Wind Converter, Photovoltaic Inverter and Motor Drives.


Potential of Wide Bandgap Semiconductors in Power Electronic Applications

Potential of Wide Bandgap Semiconductors in Power Electronic Applications

This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.


Leading-Edge Power Modules for the New Era in Traction Converters

Leading-Edge Power Modules for the New Era in Traction Converters

This article highlights Infineon Power Modules development for traction applications particularly in energy-efficiency and emission-free…


Oscilloscopes are Heavy-Duty Signal Processing Machines

Oscilloscopes are Heavy-Duty Signal Processing Machines

This article highlights Bodos VIP Interview of Henning Wriedt with Markus Herdin about Oscilloscope as Heavy-Duty Signal Processing Machines.