Powering the World with Technology that Achieves More and Consumes Less
This article highlights Roland R. Ackermann discussion about Infineon power products at PCIM2019 such as CoolSiC, CoolGaN devices, and new technologies.
At PCIM 2019, Infineon was launching power products and solutions that, according to Dr. Peter Wawer, Division President Industrial Power Control at Infineon during a press conference, will make a difference and deliver customers a cutting edge in competition.
Product highlights for an energy-efficient world
CoolSiC 1200 V MOSFET Devices
With the safe completion of the production ramp of its Silicon Carbide (SiC) MOSFET base technology, Infineon enters high volume production of a comprehensive discrete product portfolio of 1200V CoolSiC MOSFET devices (Fig. 1). The discrete SiC portfolio comprises seven different ON-resistance ratings available in both TO247-3 and TO247-4 housings. The expansion includes a surface mount device (SMD) portfolio and a 650V CoolSiC MOSFET product family, which will be launched soon.
CoolGaN 600 V e-mode HEMT Devices
The CoolGaN 600 V e-mode HEMT devices together with the GaN EiceDRIVER ICs open up new levels of efficiency for high-performance applications. Several demonstrators at the tradeshow explored Infineon’s GaN solution in next-generation server, data center, telecom, motor drives, charging, and adapter applications. The 48V architecture for hyperscale data centers is evolving. Enabling highest efficiency and power density for this innovative design, allowing for an easy transition path from 12V to 48V, Infineon’s new proprietary zero-voltage-switching switched capacitor converter (ZSC) is a technology to rely on. The ZSC board was also showcased, shedding a light on future infrastructure for big data.
Figure 1: 1200V CoolSiC MOSFET
Easy 3B package
Moreover, at PCIM 2019, Infineon introduced the Easy 3B package making the Easy family the broadest power module portfolio at 12mm height without base plate. Easy 3B is the platform to extend current inverter design to achieve higher power without changing much on the mechanical side. The new package inherits many of the advantages of the family portfolio such as the flexible pin-grid system for customizing.
Extending its large portfolio of high voltage devices, the newly introduced package XHP 3 represents a flexible IGBT module platform for high-power applications in the voltage range from 3,3kV up to 6,5kV. The module allows for scalable designs with best-in-class reliability and highest power density. Due to its symmetrical design with low stray inductance it offers significantly improved switching behavior: a solution for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives.
Coreless Hall Sensor XENSIV TLI4971
Infineon presented the first member of a new family of magnetic current sensors, too. The coreless Hall sensor XENSIV TLI4971 provides an accurate and stable current measurement in industrial applications. It offers a high level of flexibility as customers can individually program product parameters such as the current range, the overcurrent threshold, and the output mode.
Hybrid-PACK Drive Power Module
For its automotive customers, Infineon launched four new derivatives of the Hybrid-PACK Drive power module (Fig. 2) for main inverters in hybrid and electric vehicles. They are optimized for different inverter performance levels between 100kW and 200kW.
Since all members of the product family have an identical footprint, they allow for inverter performance to be scaled quickly and without a major system redesign.
Other PCIM 2019 Infineon highlights included:
- CIPOS Tiny, a new member of Infineon’s intelligent power module family
- 1200 V TRENCHSTOP IGBT7 and emitter-controlled EC7 diode in the wellknown Easy package
- iMOTION IMM100 series combining motor controller IC and a 3-phase inverter stage in a single, highly compact 12 x 12mm PQFN package
- TRENCHSTOP Feature IGBT Protected Series combining a 20A/1350V RC-H5 IGBT with a protecting gate driver IC.
Accelerated Roll-Out of Discrete CoolSiC MOSFET Portfolio
Infineon enters high volume production of a comprehensive portfolio of 1200 V CoolSiC MOSFET devices. They are rated from 30mΩ to 350mΩ and implemented into TO247-3 and TO247-4 housings. The expansion includes a surface mount device (SMD) portfolio and a 650V CoolSiC MOSFET product family, both to be launched soon.
With these products, Infineon addresses the fast-growing demand for energy-efficient SiC solutions in power conversion schemes such as battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), motor drives as well as server and telecom switched-mode-power supplies (SMPS).
“At Infineon, the launch of a new base technology is subject to strict quality criteria,” commented Dr. Peter Wawer. “Production flows for high volume manufacturing must be proven, for front- and backend even when assembling discrete housings. This includes the collection of statistical data, production monitoring, and application-relevant testing beyond standardized procedures. After the production ramp of the silicon carbide (SiC) MOSFET base technology has been safely completed, we are now bringing the most comprehensive discrete SiC portfolio for industrial applications to the market”.
As for all previously launched CoolSiC MOSFET lead products in TO247 and Easy power module package, the new discrete devices build on a leading trench SiC MOSFET semiconductor process. This process was developed to allow for both lowest losses in the application and highest reliability in operation. Furthermore, according to related application profiles, gate-source operating voltages are adopted for discrete package solutions. A benchmark low dynamic loss enables highest efficiency with a simple unipolar gate drive scheme.
Figure 2: HybridPACK-Drive
Infineon SiC Discrete MOSFETs
CoolSiC trench technology features an exclusively high threshold voltage rating (Vth) larger than 4V combined with a low Miller capacitance. For this reason, CoolSiC MOSFETs exhibit best-in-class immunity against unwanted parasitic turn-ON effects compared to other SiC MOSFETs on the market.
Together with a turn-ON gate-source voltage of +18V with 5V margin to maximum rated voltage of +23V, the new Infineon SiC discrete MOSFETs deliver an advantage over silicon (Si) IGBTs, superjunction MOSFETs as well as over other SiC MOSFETs at the highest level. Including a robust body diode rated for hard commutation, the CoolSiC MOSFET portfolio gives engineers a pathway for highest energy efficiency and making “more out of less”.
MOSFET functionality in SiC material offers a new degree of system design flexibility in power factor correction (PFC) circuits, bi-directional topologies and any hard and soft switching DC-DC converters or DC-AC inverters.
Infineon completes its discrete offering with a range of selected driver IC products fulfilling the needs posed by the ultrafast SiC MOSFET switching feature. Together, CoolSiC MOSFETs and EiceDRIVER gate driver ICs leverage the advantage of the technology: improved efficiency, space, and weight savings, part count reduction, enhanced system reliability. This opens up the possibility to lower system cost, reduces operational expenses and total cost of ownership, enabling new solutions in an energy-smart world.
About the Author
Roland R. Ackermann has been a technology journalist since 1957, covering electronics, engineering and manufacturing/automation. He has been a freelance journalist 1996, publishing work in Elektronik Journal, was editor in chief of Electronik Embedded System and verlagsweltMAGAZIN, and also wrote numerous articles in German and English publications and newspapers. He was a regular column writer in E&E Faszination Elektronik and is now a correspondent for Bodo's Power Systems. Ackermann holds talks at international venues, moderates panel discussions, and organizes events.
This article originally appeared in the Bodo’s Power Systems magazine.