Latest Semiconductors Technical Articles

This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power…

This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power converters applications.

This article highlights Tamura Corporation new soldering materials development for jointing technology in response to the…

This article highlights Tamura Corporation new soldering materials development for jointing technology in response to the requirement of power…

This article features Dynex Semiconductor dynamic load balancing technology using press-pack IGBT for ensuring robust and…

This article features Dynex Semiconductor dynamic load balancing technology using press-pack IGBT for ensuring robust and reliable device performance.

This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in…

This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in SiC MOSFET-based power…

This article examines the effects and explains how they can be mitigated along with results of experiments to evaluate…

This article examines the effects and explains how they can be mitigated along with results of experiments to evaluate stress and damage,…

This article introduces and discusses Danfoss' power module technology platform, DCM™1000, for automotive traction…

This article introduces and discusses Danfoss' power module technology platform, DCM™1000, for automotive traction applications.

This article introduces and discusses Vincotech's new flow E IGBT M7 and the upgraded MiniSKiiP® IGBT M7 product lines.

This article introduces and discusses Vincotech's new flow E IGBT M7 and the upgraded MiniSKiiP® IGBT M7 product lines.

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.

This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction…

This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a…

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.

This article is mainly discussing the functioning and the benefits of Trench Schottky rectifiers.

This article is mainly discussing the functioning and the benefits of Trench Schottky rectifiers.

This article discusses Dynex' new generation of high-power IGBT modules, covering a 3.3kV to 6.5kV voltage range.

This article discusses Dynex' new generation of high-power IGBT modules, covering a 3.3kV to 6.5kV voltage range.

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds

This article is the third of a 3-part series describing a 27 MHz off-line converter.

This article is the third of a 3-part series describing a 27 MHz off-line converter.

This article introduces the new generation of 1700V IGBT power modules called X-Series from Mitsubishi Electric that…

This article introduces the new generation of 1700V IGBT power modules called X-Series from Mitsubishi Electric that satisfies the requirements of…

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into…

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are…

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…

With the recent push from both the wider industry sectors and the government for high-efficiency systems, the…

With the recent push from both the wider industry sectors and the government for high-efficiency systems, the semiconductor industry is responding…