Latest Gallium Nitride Technical Articles

The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for…

The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…

In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive…

In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…

One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…

One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…

When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a…

When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet…

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.

This article discusses the challenges that thermal management raises due to increased power density, especially with…

This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source…

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.

This article is the first in a series of articles discussing three topics that can help power systems designers achieve…

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…

Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection…

Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.

This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance…

This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high…

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…

This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET…

This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.

This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.

This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.

This article details how the ascent of GaN is redefining power conversion.

This article details how the ascent of GaN is redefining power conversion.

This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.

This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.