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Scalability of SiC Near Chip-Scale Packages for Electric Vehicle & Locomotive Traction

Scalability of SiC Near Chip-Scale Packages for Electric Vehicle & Locomotive Traction

This article introduces the µMaxPak, a proprietary power QFN package using automated low-cost QFN assembly technology.


Design and Optimization of Silicon Carbide Schottky Diode

Design and Optimization of Silicon Carbide Schottky Diode

This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.


The Optimal Design for High Frequency GaN-Based Totem Pole PFC

The Optimal Design for High Frequency GaN-Based Totem Pole PFC

This article highlights GaN Systems EMI filter modelling methodology for a high frequency Bridgeless Totem Pole Power Factor Correction Circuit…


Using MOSFET Controllers to Drive GaN EHEMTs

Using MOSFET Controllers to Drive GaN EHEMTs

This article discusses the difference of Si MOSFET with separate controller driver, an integrated GaN/driver, and GaN power transistors with a…


The Double Pulse Test System for Power Semiconductor Dynamic Characterization

The Double Pulse Test System for Power Semiconductor Dynamic Characterization

This article highlights Keysight PD1500A Dynamic Power Device Analyzer/DPT as next generation dynamic test platform for power semiconductor device.


High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…


GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.


Potential of Wide Bandgap Semiconductors in Power Electronic Applications

Potential of Wide Bandgap Semiconductors in Power Electronic Applications

This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.


Designing High Voltage GaN Switch Reliability

Designing High Voltage GaN Switch Reliability

This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power converters applications.


Worried About Gate Driver Insulation? Apply the ‘BIER’ Test

Worried About Gate Driver Insulation? Apply the ‘BIER’ Test

This article examines the effects and explains how they can be mitigated along with results of experiments to evaluate stress and damage,…


Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…


Making GaN Power Electronics Universal

Making GaN Power Electronics Universal

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.


Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

ROHM announced the availability of a new lineup of high power wide terminal thick-film chip resistors ideal for current detection in a variety of…


Technical Articles Jan 09, 2019 by ROHM
Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…


Reduce Size and Increase Efficiency with GaN-based LLC Solutions

Reduce Size and Increase Efficiency with GaN-based LLC Solutions

GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…


Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…


A Charger IC with N Kinds of Applications

A Charger IC with N Kinds of Applications

The MP2639A is a fully integrated and flexible battery charge management IC that can charge two cells in series from a 5V power supply. USB ports…


Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its ultimate form, the μMaxPak…


Gate Drive Optocouplers for GaN Power Devices

Gate Drive Optocouplers for GaN Power Devices

This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.


x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…