When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
May 31, 2021 by Rene Mente
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
May 04, 2021 by Thomas Hauer
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…
March 30, 2021 by Uwe Jansen
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
March 22, 2021 by Mike Wens
This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).
March 15, 2021 by John Glaser
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
March 09, 2021 by Nigel Springett
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
February 22, 2021 by Alex Lidow
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.
January 29, 2021 by Lorenzo Mari
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
January 28, 2021 by Ryo Takeda
This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…
January 25, 2021 by Tony Ochoa
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…
January 20, 2021 by Vladimir Scarpa
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.
November 25, 2020 by John Glaser
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
November 02, 2020 by Ryo Takeda
This article details how the ascent of GaN is redefining power conversion.
October 22, 2020 by Alex Lidow
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
October 14, 2020 by Lei Kou
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…
October 12, 2020 by Alex Lidow
This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…
October 05, 2020 by Proton-Electrotex
July 22, 2020 by Max Zafrani
This article discusses the NexGen's Vertical GaN™ eJFET transistors and their principles of operation.
June 16, 2020 by Dinesh Ramanathan
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…
March 20, 2020 by Jimmy Liu
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