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3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…


On-Chip Electrostatic Discharge Protection for ICs

On-Chip Electrostatic Discharge Protection for ICs

Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.


Interpreting and Validating Dynamic Characteristics for Wide Bandgap Power Device Data Sheets

Interpreting and Validating Dynamic Characteristics for Wide Bandgap Power Device Data Sheets

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.


Chip-Embedded Technology Enables High Current Density Power

Chip-Embedded Technology Enables High Current Density Power

This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…


How to Achieve Fast Switching with a High-Voltage Isolated Driver IC

How to Achieve Fast Switching with a High-Voltage Isolated Driver IC

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…


Reducing Size, Noise, and Field Failures of Transportation APUs

Reducing Size, Noise, and Field Failures of Transportation APUs

Designers are finally able to extract disruptive system-level benefits of SiC technology to shrink the size, noise, and field failures of auxiliary…


Highly Efficient SiC Power Devices for a Wide Range of Applications

Highly Efficient SiC Power Devices for a Wide Range of Applications

This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…


Coreless Transformers Isolate SiC Gate Drivers for EV and Industrial Applications

Coreless Transformers Isolate SiC Gate Drivers for EV and Industrial Applications

This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…


Understanding Integrated Voltage Regulators

Understanding Integrated Voltage Regulators

This article highlights Empower Semiconductor IVR solution that is applicable to a whole range of applications, making it attractive for inventory…


Testing for Shoot-Through in Half-Bridge Power Converters

Testing for Shoot-Through in Half-Bridge Power Converters

This article gives insight into testing for shoot-through half-bridge power converters and the influence of parasitic coupling capacitance.


GaN ePower Ultrafast Switches With Integrated Gate Drivers

GaN ePower Ultrafast Switches With Integrated Gate Drivers

This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.


How to Increase Efficiency and Mitigate Power Loss in Buck Converters

How to Increase Efficiency and Mitigate Power Loss in Buck Converters

Determining the best match between an inductor and an IC is paramount to achieving the best performance in terms of PCB space, as well as thermal…


Dynamic Characterization of GaN Power Semiconductor Devices

Dynamic Characterization of GaN Power Semiconductor Devices

This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.


A Comparison of FinFET Configurations

A Comparison of FinFET Configurations

This article looks at different device configurations of MOSFETs and FinFETs and their evolution. It also discusses how 3D configuration allows for…


Earth Leakage Current in a Bi-Directional Totem Pole Converter Using Wide Band Gap Devices

Earth Leakage Current in a Bi-Directional Totem Pole Converter Using Wide Band Gap Devices

This article explains the generation mechanism of this leakage current along with its path through appropriate circuit diagrams.


What is a FinFET?

What is a FinFET?

This article explores FinFET structure, their uses in a variety of applications, and the advantages and disadvantages they have over MOSFETs.


Power Conversion with GaN-on-Si Integrated Circuits

Power Conversion with GaN-on-Si Integrated Circuits

This article details how the ascent of GaN is redefining power conversion.