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SiC Wafer & Epitaxy Advances Enable Affordable Power Semiconductors

SiC Wafer & Epitaxy Advances Enable Affordable Power Semiconductors

Improvements in SiC wafering and epitaxy manufacturing challenges are delivering affordable, high-efficiency power semiconductors.


Power Stack Reference Design for Inverter-Based Resources

Power Stack Reference Design for Inverter-Based Resources

This article examines the reference design of a power stack designed by electrothermal simulation and presents the experimental results supporting…


Designing Robust SiC Power Devices in Extreme Thermal Conditions

Designing Robust SiC Power Devices in Extreme Thermal Conditions

High power densities lead to high operating temperatures, but what does this mean for SiC MOSFETs regarding critical parameters like VGS(th),…


Bipolar Power Module Packaging Improvements

Bipolar Power Module Packaging Improvements

Bipolar modules remain a robust and cost-effective solution for industrial line-frequency applications. While the basic operation of such circuits…


Meeting AI Demands With SiC and GaN Power Supplies

Meeting AI Demands With SiC and GaN Power Supplies

New architectures and AC-DC distribution configurations are increasing demand for data center rack and PSU power, necessitating more processing…


EVs, GaN, SiC, AI, ICs: 2024 Was All About the Acronyms

EVs, GaN, SiC, AI, ICs: 2024 Was All About the Acronyms

EEPower’s collaboration with Bodo's Power Systems has yielded a wealth of technical articles addressing critical industry trends and…


How Do Smaller FRDs Improve IGBT Performance in UPS PV Inverters?

How Do Smaller FRDs Improve IGBT Performance in UPS PV Inverters?

This article examines the use of fast recovery diodes in photovoltaic inverters for uninterruptible power supplies.


Total Cost of Ownership in SiC Motor Drives—the Big Picture

Total Cost of Ownership in SiC Motor Drives—the Big Picture

This article examines the technical benefits and total cost of ownership of SiC in two types of motor drive applications.


Next-Gen PV Optimizers Use eGaN FET and Dedicated ASIC Controller

Next-Gen PV Optimizers Use eGaN FET and Dedicated ASIC Controller

As the adoption of photovoltaic systems continues, pressure on manufacturers drives innovation and the adoption of new technologies to reduce cost…


Examining GaN HEMTs as an Alternative to Silicon

Examining GaN HEMTs as an Alternative to Silicon

This article examines high electron GaN mobility transistors as an alternative to SiC in power electronics.


Mitigating DC Link Anti-Resonance for WBG-Based Designs

Mitigating DC Link Anti-Resonance for WBG-Based Designs

What causes failure in wide bandgap semiconductors, and how can engineers mitigate them?


Examining Vertical GaN Power ICs

Examining Vertical GaN Power ICs

This article examines how Fraunhofer is combining lateral and vertical geometry to develop vertical GaN power ICs and related technology.


Why Do Switching Transistors Fail?

Why Do Switching Transistors Fail?

This article examines practical experiences and explains why switching transistors fail based on a flyback converter.


Traction Inverter Trends: Transfer Molded Modules

Traction Inverter Trends: Transfer Molded Modules

Transfer molded modules could meet new BEV requirements regarding power handling capability and electrical and thermal performance.


Variable Frequency Drives: Managing Network Outage Responses

Variable Frequency Drives: Managing Network Outage Responses

Even with the most reliable networks, network outages are inevitable for a host of reasons, and managing these outages in VFD systems becomes…


Selecting Motor Controllers

Selecting Motor Controllers

Learn how to select the right motor controller for your application.


Solving Design Challenges With User-Programmable PMICs

Solving Design Challenges With User-Programmable PMICs

Working with user-programmable PMICs can be a new experience for engineers and advances in processor and field-programmable gate array technology…


Improving Reverse Recovery Time With Trench MOS Structures

Improving Reverse Recovery Time With Trench MOS Structures

Trench MOS structures offer several benefits compared to traditional p-n junction solutions. Learn what they are here.


Enhancing Reliability and Compatibility With E-Mode GaNFETs

Enhancing Reliability and Compatibility With E-Mode GaNFETs

Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and compatibility of gate driving for…


Challenges of Bare Chip Dynamic Characterization

Challenges of Bare Chip Dynamic Characterization

Power semiconductors contain bare chips that must be characterized before being placed in a package or power module but several challenges must…