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High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.


Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…


Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful…


Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…


Collaboration on SiC Power Stack Reference Design

Collaboration on SiC Power Stack Reference Design

E-mobility and renewable energy systems require power management solutions that drive performance and cost efficiencies in addition to speeding up…


Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Applications of Wide Bandgap Devices

Applications of Wide Bandgap Devices

Some applications include string inverters, wind power, auxiliary power, hot swap technologies, traction inverters, EV charging and more.


SiC and GaN-based Wide Bandgap Devices for Power Conversion

SiC and GaN-based Wide Bandgap Devices for Power Conversion

Silicon has been the semiconductor material that has been used the most in power electronics applications. The maturity of the silicon…


Wide Bandgap Devices for Power Converters — Part 2

Wide Bandgap Devices for Power Converters — Part 2

This article will dissect the benefits of wide bandgap technologies for power converters.


Wide Bandgap Devices for Power Converters — Part 1

Wide Bandgap Devices for Power Converters — Part 1

This article will dive into the basics of wide bandgap materials and share an overview of SiC and GaN devices.


Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Knowing the power dissipation of a transistor is important to calculate the overall efficiency of the system and dimension the transistor’s…


How Lightweight 5G is Made Possible by GaN

How Lightweight 5G is Made Possible by GaN

With the launch of 5G, this next generation cellular network promises a trilogy of capabilities that will change how we approach wireless…


Using GaAs Diodes to Reduce Cost in High Power LLC Converters

Using GaAs Diodes to Reduce Cost in High Power LLC Converters

GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…


Seven Steps to Highly Effective GaN Designs

Seven Steps to Highly Effective GaN Designs

Today, we operate in a very fast-moving world, looking for shortcuts, opportunities to “copy and paste” to complete tasks in a short period of…


Driving SiC MOSFETs & IGBTs With Current Source Gate Driver

Driving SiC MOSFETs & IGBTs With Current Source Gate Driver

This article outlines how ROHM’s new current source gate driver – the BM60059FV-C – offers a possibility of reducing switching losses by up…


How GaN FETs Have Become the Technology of Choice for Audiophiles

How GaN FETs Have Become the Technology of Choice for Audiophiles

Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…


How to Empower Automotive DC Fast-Charging with Advanced Current Sensing

How to Empower Automotive DC Fast-Charging with Advanced Current Sensing

Although range anxiety is disappearing from the short list of objections to EV adoption, it has been replaced by recharging speed angst. For the…


Powering the Energy Transition with Silicon Carbide and Wide Band-Gap Devices

Powering the Energy Transition with Silicon Carbide and Wide Band-Gap Devices

Silicon Carbide (SiC) is poised to transform the global power electronics industry as it makes increasing inroads into the market share of legacy…


Delivering Higher Short-Circuit Capability for GaN FETs

Delivering Higher Short-Circuit Capability for GaN FETs

Short-circuit capability of power switches is a critical feature for all power systems, particularly those more susceptible to experiencing short…


Moving from IGBT to SiC: PFC Efficiency

Moving from IGBT to SiC: PFC Efficiency

The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…