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SiC MOSFET Enhances Stability Under Real Application Conditions

SiC MOSFET Enhances Stability Under Real Application Conditions

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…


GaN — Assuring Price, Volume and Security of Supply

GaN — Assuring Price, Volume and Security of Supply

(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…


SiC Devices Used in PFC for EV Charger Applications

SiC Devices Used in PFC for EV Charger Applications

This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status of silicon carbide (SiC)…


Are Hybrid Transducers the Future for Power Converters with SiC MOSFETs?

Are Hybrid Transducers the Future for Power Converters with SiC MOSFETs?

Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented cut-off frequencies above 1MHz.…


GaN ePower Integrated Circuits Applied to Motor Drives

GaN ePower Integrated Circuits Applied to Motor Drives

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…


High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.


Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

Lowest On-resistance SiC FETs Offer Rugged Short-Circuit Performance

The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…


Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful…


Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…


Collaboration on SiC Power Stack Reference Design

Collaboration on SiC Power Stack Reference Design

E-mobility and renewable energy systems require power management solutions that drive performance and cost efficiencies in addition to speeding up…


Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Applications of Wide Bandgap Devices

Applications of Wide Bandgap Devices

Some applications include string inverters, wind power, auxiliary power, hot swap technologies, traction inverters, EV charging and more.


SiC and GaN-based Wide Bandgap Devices for Power Conversion

SiC and GaN-based Wide Bandgap Devices for Power Conversion

Silicon has been the semiconductor material that has been used the most in power electronics applications. The maturity of the silicon…


Wide Bandgap Devices for Power Converters — Part 2

Wide Bandgap Devices for Power Converters — Part 2

This article will dissect the benefits of wide bandgap technologies for power converters.


Wide Bandgap Devices for Power Converters — Part 1

Wide Bandgap Devices for Power Converters — Part 1

This article will dive into the basics of wide bandgap materials and share an overview of SiC and GaN devices.


Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Knowing the power dissipation of a transistor is important to calculate the overall efficiency of the system and dimension the transistor’s…


How Lightweight 5G is Made Possible by GaN

How Lightweight 5G is Made Possible by GaN

With the launch of 5G, this next generation cellular network promises a trilogy of capabilities that will change how we approach wireless…


Using GaAs Diodes to Reduce Cost in High Power LLC Converters

Using GaAs Diodes to Reduce Cost in High Power LLC Converters

GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…


Seven Steps to Highly Effective GaN Designs

Seven Steps to Highly Effective GaN Designs

Today, we operate in a very fast-moving world, looking for shortcuts, opportunities to “copy and paste” to complete tasks in a short period of…


Driving SiC MOSFETs & IGBTs With Current Source Gate Driver

Driving SiC MOSFETs & IGBTs With Current Source Gate Driver

This article outlines how ROHM’s new current source gate driver – the BM60059FV-C – offers a possibility of reducing switching losses by up…