An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for traction inverters, with some…
An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for traction inverters, with some…
This article highlights avalanche ruggedness of discrete 1.2 kV SiC MPS diodes.
This article highlights avalanche ruggedness of discrete 1.2 kV SiC MPS diodes.
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors…
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…
This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the…
This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the Auxiliary Resonant…
This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics…
This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics and application…
This article focuses on the 2-level inverter and use this topology to exhibit the results
This article focuses on the 2-level inverter and use this topology to exhibit the results
This article introduces the µMaxPak, a proprietary power QFN package using automated low-cost QFN assembly technology.
This article introduces the µMaxPak, a proprietary power QFN package using automated low-cost QFN assembly technology.
This article focuses on the AC-to-DC stage with power factor correction
This article focuses on the AC-to-DC stage with power factor correction
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC)…
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.
This article highlights GaN Systems EMI filter modelling methodology for a high frequency Bridgeless Totem Pole Power…
This article highlights GaN Systems EMI filter modelling methodology for a high frequency Bridgeless Totem Pole Power Factor Correction Circuit…
This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power…
This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power modules with High peak gate…
This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power…
This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power converters with high…
This article discusses the difference of Si MOSFET with separate controller driver, an integrated GaN/driver, and GaN…
This article discusses the difference of Si MOSFET with separate controller driver, an integrated GaN/driver, and GaN power transistors with a…
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with…
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.
This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM…
This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM Europe 2019 press conference.
This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules…
This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules that contains DC/DC…
This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power…
This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.
This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power…
This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power converters applications.
This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in…
This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in SiC MOSFET-based power…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.
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