July 02, 2021 by Eugen Stumpf
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…
June 25, 2021 by Ingo Skuras
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
June 11, 2021 by Francesco Iannuzzo
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
May 31, 2021 by Rene Mente
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
May 04, 2021 by Thomas Hauer
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…
March 30, 2021 by Uwe Jansen
This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).
March 15, 2021 by John Glaser
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…
February 24, 2021 by Blaz Klobucar
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
February 22, 2021 by Alex Lidow
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
February 15, 2021 by Anup Bhalla, UnitedSiC
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.
January 29, 2021 by Lorenzo Mari
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
January 28, 2021 by Ryo Takeda
This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…
January 25, 2021 by Tony Ochoa
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…
January 20, 2021 by Vladimir Scarpa
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…
January 11, 2021 by Rene Spenke
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…
January 06, 2021 by Mitch Van Ochten, ROHM Semiconductor
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
November 02, 2020 by Ryo Takeda
This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…
October 05, 2020 by Proton-Electrotex
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.
September 30, 2020 by David Levett
In this third article of the series, we will look at SiC power transistors.
August 17, 2020 by Artur Seibt
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