Navigating the Evolving Patent Landscape in SiC and GaN Technologies

This article is published by EEPower as part of an exclusive digital content partnership with Bodo’s Power Systems.

The rapid rise of Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies over the past decade has significantly reshaped the power electronics industry. These wide-bandgap materials offer substantial advantages, such as reduced power losses, higher switching speeds, and the ability to operate at elevated temperatures, making them particularly suitable for applications in electric vehicles (EV), renewable energy systems, and advanced communication technologies.

Patent filings are typically a strong indicator of the level of R&D and commercial activity in a field. Looking at patent filing trends in SiC-based and GaN-based power electronic technologies, as shown in Figure 1, there has been a steady increase in filings over the past decade, reflecting growing interest and rapid advancements in the field. This upward trend, with annual filings increasing nearly eightfold in the past decade, indicates both heightened competition among key players and the expanding application of wide-bandgap materials in power electronics. This perhaps also reflects the growing role of SiC and GaN as essential technologies for driving innovation and addressing the evolving demands of industries like electric vehicles, renewable energy, and telecommunications.

Figure 1. Number of patent filings relating to power electronics based on SiC and GaN technologies by publication year. (Search covers: “Major authorities” (CA CN DE EP FR GB JP KR RU US WO). Search terms used: (power electronics) AND (“Gallium Nitride” OR “GaN” OR “Silicon Carbide” OR “SiC”). *Patent applications are typically published 18 months after the priority date (first filing), meaning some patents filed in late 2023 and 2024 have not yet been published. As the search was conducted on 22 November 2024, the final number of published applications for 2024 is expected to be higher.) Image used courtesy of Bodo’s Power Systems [PDF]

The Global Race for Leadership in SiC and GaN Technologies

The competitive dynamics in SiC and GaN patent filings signal a growing global race to secure leadership in this field. Europe, home to established players such as Infineon and STMicroelectronics, has seen a significant number of filings, particularly at the European Patent Office (EPO), followed by the US and China, as shown in Figure 2. This demonstrates Europe’s continued strength in SiC technologies, especially in high-performance electric vehicles and industrial systems.

Figure 2. Patent filings related to SiC and GaN technologies by country. (Search covers: “Major authorities” (CA CN DE EP FR GB JP KR RU US WO). Search terms used: (power electronics) AND (“Gallium Nitride” OR “GaN” OR “Silicon Carbide” OR “SiC”). *Patent applications are typically published 18 months after the priority date (first filing), meaning some patents filed in late 2023 and 2024 have not yet been published. The search was conducted on 22 November 2024). Image used courtesy of Bodo’s Power Systems [PDF]

Figure 2 also highlights the strong position of the US in SiC innovation, with companies such as Wolfspeed (formerly Cree) making substantial advancements, particularly in 200 mm wafer production, which promises higher yields for large-scale applications. Their vertical integration model enhances their presence in SiC power devices, particularly for automotive powertrains. In East Asia, Japan continues to see significant progress, with companies like Mitsubishi Electric, ROHM, and Panasonic focusing on technologies like defect-reduction techniques for SiC and cost-effective GaN-on-silicon solutions. South Korean firms such as Samsung and SK hynix are also making notable advancements in SiC and GaN technologies, especially in high-efficiency power conversion and automotive applications.

Image used courtesy of Adobe Stock

Optimizing Intellectual Property Strategies

In SiC and GaN technologies, patent filings often focus on critical areas of innovation, such as improving substrate quality, refining device architectures, and enhancing manufacturing scalability. For example, innovations in defect reduction for SiC wafers directly impact the efficiency and reliability of power devices, while advances in GaN-on-silicon aim to deliver performance comparable to GaN-on-sapphire at a significantly lower cost.

For businesses, research institutions, and other entities working in complex, multilayered technological fields like SiC and GaN, effectively managing patent portfolios is essential. Licensing agreements, strategic partnerships, and cross-licensing arrangements can help strengthen competitive positioning in the market. Even for organizations with established IP departments, a collaboration between in-house IP teams and external patent attorneys, who may be able to propose additional IP strategies and highlight broader considerations with directly relevant, neighboring, or even remote technological areas in mind, can offer significant advantages. Furthermore, for international businesses, seeking IP advice from local attorneys who are familiar with specific jurisdictional practices is essential to ensure effective protection across different markets.

IP Considerations for Engineers

For engineers working in fields that are complex and highly active, such as SiC and GaN technologies, seeking support from in-house IP departments or patent attorneys is crucial to ensure that their innovations are protected effectively. Early engagement with IP professionals helps explore the existing patent landscape, identify potential infringement risks, and assess whether new inventions or products might conflict with existing rights.

Furthermore, engineers often underestimate their own inventions, particularly when it comes to the “inventiveness” of incremental innovations in complex fields of technology. These seemingly small improvements can lead to patents that provide valuable commercial protection with carefully scoped patent applications.

Perhaps most importantly, engineers need to be cautious about when and what they disclose, as public disclosure can prevent them from patenting an invention. To mitigate this risk, it is advisable to consult with in-house IP departments or patent attorneys early in the development process, particularly when working on complex and evolving technologies like SiC and GaN.

Strategic IP Management in the Evolving and Complex Technology Landscape

As SiC and GaN technologies continue to advance, the competitive patent environment will play a pivotal role in shaping the future of power electronics. Innovations in SiC wafer production, GaN device scaling, and novel architectures are expected to drive further growth in patent filings. These developments are also expected to provide further innovations, which inevitably complicate the IP landscape in the field.

To effectively navigate such a complex IP landscape, it is important for engineers and innovators to engage actively with patent professionals or their in-house IP departments. This helps ensure that their innovations are properly protected while supporting ongoing technical progress. As the industry evolves, strategic intellectual property management will be key to maximizing the impact of these technologies and enabling advances in the wider technological fields such as automotive, renewable energy, and telecommunications.

This article originally appeared in Bodo’s Power Systems [PDF] magazine and is co-authored by Dr. Dongyoung Kim, Technical Assistant and Dr. Robert Sackin, Partner at intellectual property law firm, Reddie & Grose.