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Taking Advantage of SiC’s High Switching Speeds

Taking Advantage of SiC’s High Switching Speeds

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…


Accelerating the Adoption of SiC Power

Accelerating the Adoption of SiC Power

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is harvesting the advantages SiC…


High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power…


Full SiC Performance in Power Modules

Full SiC Performance in Power Modules

This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.


SiC Cascodes and Their Advantages in Power Electronic Applications

SiC Cascodes and Their Advantages in Power Electronic Applications

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.


SiC in Industrial Auxiliary Power Supplies

SiC in Industrial Auxiliary Power Supplies

This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…


Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™ family equipped with…


3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.


Advanced Si-IGBT Chip Design for Maximum Overall System Performance

Advanced Si-IGBT Chip Design for Maximum Overall System Performance

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.


SiC Devices Poised and Ready for Harsh Environment Applications

SiC Devices Poised and Ready for Harsh Environment Applications

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.


SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Side Wall Gate - Moving on from Trench

Side Wall Gate - Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.


Reliable SiC Power Devices for Automotive Applications

Reliable SiC Power Devices for Automotive Applications

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.


A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.


1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…


SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


A Practical Study on Three-Level Hybrid SiC/Si Inverters

A Practical Study on Three-Level Hybrid SiC/Si Inverters

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…


Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…


State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…