Latest Silicon Carbide Technical Articles

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to…

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2…

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over…

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in…

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout…

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that…

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency…

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure…

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of…

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable…

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and…

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max…

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.