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Latest Silicon Carbide Technical Articles

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From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.


High-Precision Power Measurement of SiC Inverters

High-Precision Power Measurement of SiC Inverters

This article introduced important considerations that come into play when measuring the efficiency and loss of inverters and motors.


LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.


Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.


Overcoming Challenges in Driving Silicon Carbide Power Modules

Overcoming Challenges in Driving Silicon Carbide Power Modules

This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.


SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…


SiC for safeguarding AC and DC power circuitry

SiC for safeguarding AC and DC power circuitry

This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power circuitry and its benefits.


Increased Packing Density From Double-Sided Power Semiconductor Cooling

Increased Packing Density From Double-Sided Power Semiconductor Cooling

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…


Advantages of the 1200 V SiC Schottky Diode with MPS Design

Advantages of the 1200 V SiC Schottky Diode with MPS Design

This article describes how consistent innovations in device design and assembly techniques improve performance, reliability and cost position of…


Paralleling SiC Cascodes for High Performance High Power Systems

Paralleling SiC Cascodes for High Performance High Power Systems

This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.


Advances in SiC MOSFET Technology Drive Down Cost of HighBay and Outdoor Lighting Fixtures

Advances in SiC MOSFET Technology Drive Down Cost of HighBay and Outdoor Lighting Fixtures

This article discusses how single-stage topologies deliver LED driver solutions with acceptable performance at a lower cost than two-stage topologies.


Switching Behavior of USCis SiC Cascodes

Switching Behavior of USCis SiC Cascodes

This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight the difference of MOSFETs…


A 10kW 3 level UPS Inverter  Utilizing a Full SiC Module  Solution to Achieve High Efficiency and Reduce Size and Weight

A 10kW 3 level UPS Inverter Utilizing a Full SiC Module Solution to Achieve High Efficiency and Reduce Size and Weight

This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module solution to achieve high…


Robustness of SiC JFETs and Cascodes

Robustness of SiC JFETs and Cascodes

This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation


SiC MOSFET and Diode  Technologies Accelerate the Global Adoption of Solar Energy

SiC MOSFET and Diode Technologies Accelerate the Global Adoption of Solar Energy

This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.


DeRisking the Route to Silicon Carbide

DeRisking the Route to Silicon Carbide

This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…