This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.
This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.
This article introduced important considerations that come into play when measuring the efficiency and loss of inverters…
This article introduced important considerations that come into play when measuring the efficiency and loss of inverters and motors.
This article presents general module design considerations and first results on switching characteristics of LinPaks in…
This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance…
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing…
This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…
This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power…
This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power circuitry and its benefits.
This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology…
This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.
This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics…
This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…
This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon…
This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.
Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor…
Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…
This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced…
This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…
This article describes how consistent innovations in device design and assembly techniques improve performance,…
This article describes how consistent innovations in device design and assembly techniques improve performance, reliability and cost position of…
This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high…
This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.
This article discusses how single-stage topologies deliver LED driver solutions with acceptable performance at a lower…
This article discusses how single-stage topologies deliver LED driver solutions with acceptable performance at a lower cost than two-stage topologies.
This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight…
This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight the difference of MOSFETs…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module solution to achieve high…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and…
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…