Latest Semiconductors Technical Articles

This article offers methods overcoming the limitations of Schottky diode rectifier designs without the complexity of…

This article offers methods overcoming the limitations of Schottky diode rectifier designs without the complexity of traditional synchronous…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC…

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC enhancement devices.

This article introduces the features and benefits of the IGBT WebSim, a new web-based simulation feature in International…

This article introduces the features and benefits of the IGBT WebSim, a new web-based simulation feature in International Rectifier's website.

This article provides insight into the development of this new flexible high-power platform and demonstrates how…

This article provides insight into the development of this new flexible high-power platform and demonstrates how Infineon’s approach.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article discusses the non-destructive inspecting of IGBT modules for internal structural defects such as voids,…

This article discusses the non-destructive inspecting of IGBT modules for internal structural defects such as voids, non-bonds, delamination and…

This article discusses simulation of resonant LLC converter using PLECS that permits analysis of transient effects from…

This article discusses simulation of resonant LLC converter using PLECS that permits analysis of transient effects from multiple physical domains.

This article discusses the future generation of IGBT modules which will employ Enhanced Trench ET-IGBTs and Field Charge…

This article discusses the future generation of IGBT modules which will employ Enhanced Trench ET-IGBTs and Field Charge Extraction and their…

This article discusses the potential of eGaN technology in various applications such as outer space, machine interface,…

This article discusses the potential of eGaN technology in various applications such as outer space, machine interface, electricity and medicine.

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease…

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease of transition.

This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings,…

This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings, dynamics and noise…

This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product…

This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product costs and effect against…

This article discusses important insights about polymer aluminum electrolytic capacitor such as construction, properties,…

This article discusses important insights about polymer aluminum electrolytic capacitor such as construction, properties, lifetime and…

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better…

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better than their silicon-counterparts.