Latest Gallium Nitride Technical Articles

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power…

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.

This article discusses Power Integrations Switcher ICs offering significant advantages of programmability,…

This article discusses Power Integrations Switcher ICs offering significant advantages of programmability, configurability, and adjustability.

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an…

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work…

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an…

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power…

This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™…

This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™ family equipped with…

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and…

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN…

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to…

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the…

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of…

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable…

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max…

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance…

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.