Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
The MP2639A is a fully integrated and flexible battery charge management IC that can charge two cells in series from a 5V…
The MP2639A is a fully integrated and flexible battery charge management IC that can charge two cells in series from a 5V power supply. USB ports…
This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its…
This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its ultimate form, the μMaxPak…
This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.
This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.
This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters…
This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…
This article discusses the thermoreflectance thermal imaging approach allowing researchers to create maps of temperature…
This article discusses the thermoreflectance thermal imaging approach allowing researchers to create maps of temperature rise at far higher…
This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power…
This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.
This article discusses Power Integrations Switcher ICs offering significant advantages of programmability,…
This article discusses Power Integrations Switcher ICs offering significant advantages of programmability, configurability, and adjustability.
This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.
This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.
This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an…
This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…
This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work…
This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…
This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an…
This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power…
This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™…
This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™ family equipped with…
This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and…
This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN…
This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to…
This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.
This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the…
This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.
This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of…
This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.
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