EEPower

Latest Gallium Nitride Technical Articles

Categories

Optimum GaN Gate Control for Greater Performance Gains

Optimum GaN Gate Control for Greater Performance Gains

When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving circuit is essential to…


Understanding Failure Mechanisms in Test-to-Fail Methodology for eGaN Devices in Solar Applications

Understanding Failure Mechanisms in Test-to-Fail Methodology for eGaN Devices in Solar Applications

Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications, including power optimizers…


Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…


CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background, starting with the components…


Finding the Right Technology to Solve the Data Center Power Challenge

Finding the Right Technology to Solve the Data Center Power Challenge

Digitization and the rapid deployment of cloud services have boosted the growth of datacenters worldwide. Datacenters consume close to one percent…


Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…


GaN vs Silicon Smackdown

GaN vs Silicon Smackdown

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…


SiC MOSFETs Push the Boundaries of Power Electronics

SiC MOSFETs Push the Boundaries of Power Electronics

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…


SiC MOSFET Enhances Stability Under Real Application Conditions

SiC MOSFET Enhances Stability Under Real Application Conditions

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…


GaN — Assuring Price, Volume and Security of Supply

GaN — Assuring Price, Volume and Security of Supply

(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…


GaN ePower Integrated Circuits Applied to Motor Drives

GaN ePower Integrated Circuits Applied to Motor Drives

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…


High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.


Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful…


Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Applications of Wide Bandgap Devices

Applications of Wide Bandgap Devices

Some applications include string inverters, wind power, auxiliary power, hot swap technologies, traction inverters, EV charging and more.


SiC and GaN-based Wide Bandgap Devices for Power Conversion

SiC and GaN-based Wide Bandgap Devices for Power Conversion

Silicon has been the semiconductor material that has been used the most in power electronics applications. The maturity of the silicon…


Wide Bandgap Devices for Power Converters — Part 2

Wide Bandgap Devices for Power Converters — Part 2

This article will dissect the benefits of wide bandgap technologies for power converters.


Wide Bandgap Devices for Power Converters — Part 1

Wide Bandgap Devices for Power Converters — Part 1

This article will dive into the basics of wide bandgap materials and share an overview of SiC and GaN devices.


Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Knowing the power dissipation of a transistor is important to calculate the overall efficiency of the system and dimension the transistor’s…


Dual Linear Regulator for Digital IC Power Enables On-the-Fly Output Adjustment and Dynamic Headroom Optimization

Dual Linear Regulator for Digital IC Power Enables On-the-Fly Output Adjustment and Dynamic Headroom Optimization

Low dropout (LDO) linear regulators are often used to provide clean power to processor cores and communication circuits. In these applications, LDO…