Latest Mining Technical Articles

This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power…

This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power density and efficiency.

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…

This article highlights ABB welding diodes that is designed for such extreme load and set new power cycling records for…

This article highlights ABB welding diodes that is designed for such extreme load and set new power cycling records for all power semiconductor…

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…

This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.

For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape.…

For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape. However at higher…

This article discusses the requirements for power capacitors in systems seeking advantage in state-of-the-art…

This article discusses the requirements for power capacitors in systems seeking advantage in state-of-the-art high-frequency designs.

This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design…

This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design platform to another.

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure…

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of…

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable…

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and…

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…

This article describes the basic points of the X-Series design including the improvements contributing to a safe…

This article describes the basic points of the X-Series design including the improvements contributing to a safe operation of the device.

This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in…

This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in railway applications.

This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum…

This article discusses the application of technologies of low-temperature sintering of silicon wafers and molybdenum discs using the silver…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages,…

This article features Broadcom's Gallium Nitride (GaN) Transistor Gate Drive Optocouplers and discusses its advantages, marketing, drive and…

This article demonstrate the next step in device evolution can be achieved by combining the ET-IGBT MOS cell and the BIGT…

This article demonstrate the next step in device evolution can be achieved by combining the ET-IGBT MOS cell and the BIGT integration structure.

This article highlights Infineon Technologies North America Power Module designs that illustrate the importance of a…

This article highlights Infineon Technologies North America Power Module designs that illustrate the importance of a holistic design approach.

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power…

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…

This article features the MiniSKiip series as the power density master for compact motor drives in reducing cost by…

This article features the MiniSKiip series as the power density master for compact motor drives in reducing cost by maximizing output power density.

This article discusses Proton-Electrotex's line of measuring systems with high level of flexibility and work convenience…

This article discusses Proton-Electrotex's line of measuring systems with high level of flexibility and work convenience for all users.