This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in…
This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…
This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and…
This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and AlSiC Baseplate in IGBT…
This article has introduced new closed-loop Hall cell transducers which give the extra performance of fluxgate…
This article has introduced new closed-loop Hall cell transducers which give the extra performance of fluxgate transducers without the extra cost.
This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in…
This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in the new THB-HVDC test.
This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction…
This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction applications.
This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed…
This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.
This article features the 7th generation IGBT Module based on SLC (SoLid Cover)-Technology with high reliability and high…
This article features the 7th generation IGBT Module based on SLC (SoLid Cover)-Technology with high reliability and high thermal conductivity.
This article features the new Infineon HybridPACK Drive IGBT module characterized with compact design and high efficiency…
This article features the new Infineon HybridPACK Drive IGBT module characterized with compact design and high efficiency for e-mobility applications.
This article highlights Vincotech GmbH the benefits of combining the lowinductiveVINco X12 package and the Mitsubishi gen…
This article highlights Vincotech GmbH the benefits of combining the lowinductiveVINco X12 package and the Mitsubishi gen 7 for outstanding…
This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance…
This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance and reliability.
This article introduced a new series of miniature, fast and accurate transducers for isolated measurement of AC and DC currents.
This article introduced a new series of miniature, fast and accurate transducers for isolated measurement of AC and DC currents.
This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that…
This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…
This article discusses the important factors for AC-Film Capacitors to be used for power electronics specifically on…
This article discusses the important factors for AC-Film Capacitors to be used for power electronics specifically on degradation during operation.
This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power…
This article features ROHM's new 1700V SiC MOSFETs for Switch-mode Power Supplies and its benefits in terms of power density and efficiency.
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and…
This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…
This article highlights ABB welding diodes that is designed for such extreme load and set new power cycling records for…
This article highlights ABB welding diodes that is designed for such extreme load and set new power cycling records for all power semiconductor…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels…
This article features Navitas Semiconductor's half-bridge Gan Power Integrated Circuit applications with power levels from 20W to 300W or more.
For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape.…
For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape. However at higher…
This article discusses the requirements for power capacitors in systems seeking advantage in state-of-the-art…
This article discusses the requirements for power capacitors in systems seeking advantage in state-of-the-art high-frequency designs.
This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design…
This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design platform to another.