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Robustness of SiC JFETs and Cascodes

Robustness of SiC JFETs and Cascodes

This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation


The X-Series the 7th Generation IGBT Modules

The X-Series the 7th Generation IGBT Modules

This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power cycling and thermal…


Highly Reliable Transfer-Molded Power Modules

Highly Reliable Transfer-Molded Power Modules

This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical concepts and benefits.


SiC MOSFET and Diode  Technologies Accelerate the Global Adoption of Solar Energy

SiC MOSFET and Diode Technologies Accelerate the Global Adoption of Solar Energy

This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.


DeRisking the Route to Silicon Carbide

DeRisking the Route to Silicon Carbide

This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…


DMR 91  MnZn Ferrite Material with High Flux Density and Low Power Loss for Power Applications

DMR 91 MnZn Ferrite Material with High Flux Density and Low Power Loss for Power Applications

This article introduces DMEGC's new power material DMR91 for high-frequency applications as cores with high flux density and low loss in power…


Inrush-Current Limiting Wirewound Resistors to Charge the DC-Link Capacitor of an Electric Drive System

Inrush-Current Limiting Wirewound Resistors to Charge the DC-Link Capacitor of an Electric Drive System

This article discusses the method of using Inrush-Current Limiting Wirewound Resistors to Charge the DC-Link Capacitor of an Electric Drive System.


EMC Simulation of Cable Interference in Ecars

EMC Simulation of Cable Interference in Ecars

This article presents three geometry simulation models of the basic components in an E-car to obtain optimum cable length and receive suitable EMC.


Improving Inverter Protection with a Smart CouplerDriver

Improving Inverter Protection with a Smart CouplerDriver

This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart gate-driver.


When to Use Litz Wire

When to Use Litz Wire

This article discusses the best practices of when to use Litz Wire in design process for inductors, transformer, and/or systems.


Power Supplies for  Datacom Applications

Power Supplies for Datacom Applications

This article discusses the necessary requirements of power supplies to be applied for datacom applications in terms of power density and losses.


Wireless Power Transmission with High Efficiency and Wide Dynamic Range for Extensive Applications

Wireless Power Transmission with High Efficiency and Wide Dynamic Range for Extensive Applications

This article introduces the concept of transmitting power over wireless link with accordance to uniWP that allows multiple new applications and…


MADMIX The Standard for Measuring SMPS Inductors

MADMIX The Standard for Measuring SMPS Inductors

This article introduces the advantages and features of MinDCet's MADMIX for power electronics industry to consistently measure inductors in…


Magnetics Design Tool for Power Applications

Magnetics Design Tool for Power Applications

This article discusses the features of the free app, SOFT Power, for simulations such as hysteresis modelling for reliable design of power…


DCLink Capacitor Technology Comparison Aluminum Electrolytic vs Film Capacitors

DCLink Capacitor Technology Comparison Aluminum Electrolytic vs Film Capacitors

This article compares aluminum electrolytic capacitors and film capacitors as DC-Link circuit capacitor in power electronics applications.


SiC Diodes SiC MOSFETs and Gate Driver IC

SiC Diodes SiC MOSFETs and Gate Driver IC

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.


New 800A1200V Full SiC Module

New 800A1200V Full SiC Module

This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT modules in power…


Optimizing Control of Both the Synchronous Rectifier and Primary MOSFET in Flyback Power Supplies Improves Efficiency and Reliability

Optimizing Control of Both the Synchronous Rectifier and Primary MOSFET in Flyback Power Supplies Improves Efficiency and Reliability

This article offers methods overcoming the limitations of Schottky diode rectifier designs without the complexity of traditional synchronous…


Performance Comparisons of SiC Transistors GaN Cascodes and Si  Coolmos in SMPS

Performance Comparisons of SiC Transistors GaN Cascodes and Si Coolmos in SMPS

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.


Using Normally on JFETs in Power Systems

Using Normally on JFETs in Power Systems

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC enhancement devices.