Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
5 days ago by Pavel Gurev
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…
July 16, 2021 by Iain Mosely
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
July 05, 2021 by Marco Palma
Learn about the traits of the rectifying p-n junctions in semiconductors.
June 15, 2021 by Lorenzo Mari
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
June 14, 2021 by Lorenzo Mari
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
June 11, 2021 by Francesco Iannuzzo
The presence and properties of electrons and holes are fundamental to understand how semiconductor devices operate
June 10, 2021 by Lorenzo Mari
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…
June 03, 2021 by Ryo Takeda
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
May 31, 2021 by Rene Mente
When a particular element’s atoms are far apart, each individual atom exhibits some permissible energy levels. But, with atoms closely packed in…
May 19, 2021 by Lorenzo Mari
Learn about solid-state characteristics: atomic bonding and crystals.
May 17, 2021 by Lorenzo Mari
In this “semiconductor basics” article, learn about the electronic structure of atoms and the electrons’ energy.
May 12, 2021 by Lorenzo Mari
Learn about the shell structure of atomic energy levels.
May 11, 2021 by Lorenzo Mari
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
May 04, 2021 by Thomas Hauer
This article highlighs Proton Electrotex dual-component A2-type power thyristor module with a baseplate width of 60 mm rated for a voltage of 1800…
April 20, 2021 by Dmitry Titushkin
A grounding arrangement must be designed and implemented adequately for the electronic equipment’s proper performance
April 16, 2021 by Lorenzo Mari
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
March 22, 2021 by Mike Wens
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…
February 24, 2021 by Blaz Klobucar
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
February 22, 2021 by Alex Lidow
This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…
January 25, 2021 by Tony Ochoa
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