This article discusses how the cost differences can be bridged by the benefits of the 4x inductor size reduction, smaller heat sink and smaller…
April 01, 2020 by Edgaras Mickus
Showcasing the performance of Gallium Nitride (GaN) power transistors in comparison to Silicon Superjunction MOSFETs (Si SJMOS) and Silicon Carbide…
March 20, 2020 by Jimmy Liu
Pre-Switch's solution for the elimination of switching losses by incorporating AI into the Auxiliary Resonant Commutated Pole (ARCP)…
March 16, 2020 by Bruce Renouard
This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics and application…
March 11, 2020 by Anup Bhalla
Hitachi highlights Silicon Carbide (SiC) 3.3 kV power module with the next generation package platform, nHPD2.
March 09, 2020 by Katsuaki Saito
The SKiM63/93 power semiconductor module was launched in 2011 and, owing to its versatility, has become an important IGBT module platform for many…
March 02, 2020 by Marco Honsberg
Semiconductor Packaging Solutions highlights µMaxPak packaging enables full SiC performance, efficiency & speed at high currents &…
February 24, 2020 by Courtney Furnival
SiC-based Totem Pole PFCs play a role in minimizing the cost and the ecological footprint of the higher demand for computing infrastructure power.
February 17, 2020 by Christian Felgemacher
This article features Nexperia's LFPAK package family designed to improve power density.
January 28, 2020 by Neil Massey
This article highlights STMicroelectronics STDRIVE601 monolithic device embedding three half-bridge gate drivers for N channel power MOSFETs or IGBTs.
January 15, 2020 by Michele Lauria
This article highlights WeEn Semiconductors WeEn NXPSC0465 device for design and optimization of Silicon Carbide (SiC) Schottky Diode.
January 10, 2020 by Alex Cui
This article highlights GaN Systems EMI filter modelling methodology for a high frequency Bridgeless Totem Pole Power Factor Correction Circuit…
January 02, 2020 by Jimmy Liu
This article highlights Keysight Technologies Incorporated simulation of wide-bandgap (WBG) power semiconductor devices with characterization and…
December 27, 2019 by Ryo Takeda
The automotive industry is currently undergoing a tremendous change. Due to higher awareness of the negative impact of air pollutants on human…
December 03, 2019 by Rene Spenke
This article features Taiwan Semiconductor Europe SMA and SMD Package as newer packages that transport heat more efficiently and waste less space…
October 25, 2019 by Jos Van Loo
Demystifying the Paralleling of IGBT Modules.
October 16, 2019 by Thomas Schutze
This article highlights Infineon chipset of IGBT7 and emitter-controlled 7 diode that is user-friendly and optimized to fulfill the GPD requirements.
September 30, 2019 by Klaus Vogel
This article features CISSOID CMT-TIT8243 high temperature high voltage isolated Gate Driver for 62mm SiC MOSFET power modules with High peak gate…
September 25, 2019 by Pierre Delatte
This article discusses how to design a SiC-MOSFET Based 6.6kW Bi-Directional EV On-Board Charger.
September 11, 2019 by Chen Wei
This article highlights Infineon Technologies CoolSiC MOSFET device with its gate-drive designs advantages against MOSFET parasitic turn-ON effect.
September 09, 2019 by Klaus Sobe
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