Latest Wide Bandgap Technical Articles

This article describes how consistent innovations in device design and assembly techniques improve performance,…

This article describes how consistent innovations in device design and assembly techniques improve performance, reliability and cost position of…

This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high…

This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.

This article discusses how single-stage topologies deliver LED driver solutions with acceptable performance at a lower…

This article discusses how single-stage topologies deliver LED driver solutions with acceptable performance at a lower cost than two-stage topologies.

This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight…

This article examines the hard switching turn-on and turn-off mechanisms in this device, to give the users some insight the difference of MOSFETs…

This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be…

This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.

This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module…

This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module solution to achieve high…

This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the…

This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation

This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and…

This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.

This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…

This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC…

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.

This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT…

This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT modules in power…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better…

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better than their silicon-counterparts.