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Silicon Nitride Substrates for Improved Performance in Power Electronics

Silicon Nitride Substrates for Improved Performance in Power Electronics

This article discusses the comparison between silicon nitride substrates and other materials and offers insights of Silicon Nitride Substrates.


Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power…


Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™ family equipped with…


Advanced Si-IGBT Chip Design for Maximum Overall System Performance

Advanced Si-IGBT Chip Design for Maximum Overall System Performance

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.


Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…


Operation of Power Silicon for Cascade Cell Based MV Motor Drives

Operation of Power Silicon for Cascade Cell Based MV Motor Drives

For standard low voltage (≤690Vac) motor drives the IGBT based voltage source 2 level topology dominates the landscape. However at higher…


IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.


High Voltage Ceramic Chip Capacitors Evaluated Acoustically

High Voltage Ceramic Chip Capacitors Evaluated Acoustically

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.


Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…


The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…


The Creation of Silicon Carbide  Revolutionary Semiconductor

The Creation of Silicon Carbide Revolutionary Semiconductor

This article highlights SiCrystal AG and Rohm Semiconductor GmbH for the potential of Silicon Carbide material for power and RF electronics…


The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.


MiniSKiiP with a Silicon Nitride AMB Substrate

MiniSKiiP with a Silicon Nitride AMB Substrate

This article discusses the advantages and benefits of MiniSKiip with Si3N4 AMB Substrate and compares that of the conventional counterpart.


Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.


Overcoming Challenges in Driving Silicon Carbide Power Modules

Overcoming Challenges in Driving Silicon Carbide Power Modules

This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.


Silicon and GaN Transistor Comparison: Optimized Inverter Design

Silicon and GaN Transistor Comparison: Optimized Inverter Design

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.


Increased Packing Density From Double-Sided Power Semiconductor Cooling

Increased Packing Density From Double-Sided Power Semiconductor Cooling

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…