Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…
Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…
This article describes how consistent innovations in device design and assembly techniques improve performance,…
This article describes how consistent innovations in device design and assembly techniques improve performance, reliability and cost position of…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…
This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC…
This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.
This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product…
This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product costs and effect against…
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