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The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


Achieving very low or zero standby power for AC-DC power supplies

Achieving very low or zero standby power for AC-DC power supplies

In the future, the average household will have more than 60 devices plugged in and on standby 24 hours a day. From coffee machines and TVs to chargers


System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.


Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN® FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN® FETs

This article highlights Efficient Power Conversion ET power supply using EPC8004 high frequency eGaN FETs for 4G LTE wireless base station…


4th Generation Field Stop IGBT with Enhanced Latch up Immunity

4th Generation Field Stop IGBT with Enhanced Latch up Immunity

This article highlights Fairchild Semiconductor 4th generation Field Stop (FS) IGBT that offers superior device performance under static and…


6500 V X-Series High Voltage IGBT Modules

6500 V X-Series High Voltage IGBT Modules

This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.


Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…


Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

This article highlights Mitsubishi Electric Dual-In-line Package (DIP) Intelligent Power Module SLIMDIP with ratings of 5A and 15A/600V in a…


The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

This article discusses the advantages brought about by IGBT5 and .XT Technology in increasing the power density and lifetime of power modules.


BTRAN  BiDirectional BiPolar Junction Transistor

BTRAN BiDirectional BiPolar Junction Transistor

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.


Temperature Limits for Power Modules Part-1: Maximum Junction Temperature

Temperature Limits for Power Modules Part-1: Maximum Junction Temperature

This article features Infineon temperature limits for power module by understanding the effect of changing operating conditions and application…


European PowerBase to Explore the NextGeneration Power Devices

European PowerBase to Explore the NextGeneration Power Devices

This article introduces European 'PowerBase' development of GaN-based power devices and offers insights on new substrate technologies.


Technical Articles Dec 10, 2015 by imec
Advantages of the 1200 V SiC Schottky Diode with MPS Design

Advantages of the 1200 V SiC Schottky Diode with MPS Design

This article describes how consistent innovations in device design and assembly techniques improve performance, reliability and cost position of…


The Focus is on Passive Components for Further Gains in SMPS Efficiency

The Focus is on Passive Components for Further Gains in SMPS Efficiency

This article discusses the passive components and effects that are important things to consider to have further gains in SMPS efficiency.


BiAgX HighTemperature LeadFree Pbfree Solder Paste

BiAgX HighTemperature LeadFree Pbfree Solder Paste

This article introducest Indium Corporation's BiAgX, a high-temperature lead-free solder paste for surface-mount-technology (SMT) applications.


Low Loss HighPower Thyristors for Industrial Applications

Low Loss HighPower Thyristors for Industrial Applications

This article introduces ABB's development of the Phase Control Thyristor for HVDC and discusses its design concept and the device performance.


Powering IGBT Drivers with TI039s FlyBuck Converter

Powering IGBT Drivers with TI039s FlyBuck Converter

This article offers methods of using Fly-Buck converter as a cost-effective and simpler solution to power IGBT driver in the AC motor drives and…


Increased Power Density and Performance with 3D Embedded Substrate Technologies

Increased Power Density and Performance with 3D Embedded Substrate Technologies

This article discusses the investigation done by PSMA and offers the important core technologies required for embedding substrates.